MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC026N02KS G


Infineon Technologies MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
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Infineon 4733
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AUD 1.2833
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25 A20 V2.6 mOhmsN - Channel12 V700 mV- 55 C+ 150 C2.8 WSmd/SmtTDSON - 8ReelSi1 Channel12 V52.7 nCEnhancement Optimos
Hot IRLU024PBF


MOSFET RECOMMENDED ALT 844-IRLU024
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Vishay 4732
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AUD 1.2182
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         Through HoleTO - 251 - 3TubeSi      
BSC018N04LS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 4731
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AUD 0.8193
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100 A40 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V150 nCEnhancement Optimos
RS6R035BHTB1


MOSFETs RS6R035BH is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
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ROHM 4726
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AUD 1.7896
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35 A150 V41 mOhmsN - Channel 4 V- 55 C+ 150 C73 WSMD/SMTHSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
AP25N06K


60V 30A 50W 26mΩ@10V,15A 3V@250uA N Channel TO-252 MOSFETs ROHS
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Quan Li 4723
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AUD 0.1723
Multiples of: 5

                   
RQ5E030AJTCL


MOSFET Nch 30V 3Ad Si MOSFET
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ROHM 4715
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AUD 0.2233
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3 A30 V57 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346 - 3Cut TapeSi1 Channel12 V2.1 nCEnhancement  
AON7401-MS


30V 50A 13mΩ@10V 2.5V P Channel DFN3x3-8L MOSFETs ROHS
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MSKSEMI 4709
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AUD 0.1686
Multiples of: 5

                   
BSD223P H6327


Infineon Technologies MOSFET P-Ch DPAK-2
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Infineon 4705
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AUD 0.1001
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390 mA20 V700 mOhmsP - Channel 1.2 V- 55 C+ 150 C250 mWSmd/SmtSOT - 363 - 6ReelSi1 Channel12 V- 620 pCEnhancement  
SP3011ACNK


30V 1 N-Channel + 1 P-Channel PDFN-8L(5x6) MOSFETs ROHS
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Siliup 4699
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AUD 0.1437
Multiples of: 5

                   
APG013N04G


40V 160A 1.1mΩ@20V,160A 1.6V@250uA N Channel PDFN-8L(5X6) MOSFETs ROHS
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Quan Li 4592
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AUD 1.047
Multiples of: 1

                   
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