MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR122LDP-T1-RE3


MOSFETs N-CHANNEL 80-V (D-S)
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Vishay 7342
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AUD 0.7273
Multiples of: 1

62.3 A80 V7.35 mOhmsN - Channel 2.5 V- 55 C+ 150 C SMD/SMTSO - 8 Si1 Channel- 20 V , + 20 V34.6 nCEnhancement  
DMG2307L


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4745
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AUD 0.0654
Multiples of: 10

                   
FDT3612(UMW)


SOT-223 MOSFETs ROHS
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Youtai 4743
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AUD 0.0902
Multiples of: 5

                   
BLM3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 59 mΩ @ 4A,2.5V SOT-23 (SOT-23-3) RoHS
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Belling 4742
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AUD 0.0584
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TSM051N04LCP ROG


MOSFET MOSFET, Single, N-Ch Trench, 40V, 96A
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Taiwan Semiconductor 4742
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AUD 1.8615
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96 A40 V4.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C89 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V44.5 nCEnhancement  
5N10


100V 5A 1.2W 110mΩ@10V,3.0A 1.8V@250uA null SOT-23 MOSFETs ROHS
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GOODWORK 4738
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AUD 0.0345
Multiples of: 10

                   
RXH090N03TB1


MOSFET MOSFET
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ROHM 4702
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AUD 0.7946
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9 A30 V17 mOhmsN - Channel 2.5 V + 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V6.8 nCEnhancement  
SI7469DP-T1-GE3


MOSFET 80V 28A 83W 25mohm @ 10V
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Vishay 4685
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AUD 1.912
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
SIS407ADN-T1-GE3


P-Channel 20 V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 4070
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AUD 0.6683
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18 A20 V9 mOhmsP - Channel 400 mV- 55 C+ 150 C39.1 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel- 4.5 V112 nCEnhancement Trenchfet
DMN1004UFDF-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 3981
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AUD 0.2857
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15 A12 V4.1 mOhmsN - Channel 300 mV- 55 C+ 150 C2.1 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel8 V47 nCEnhancement  
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