MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM110NB04LDCR RLG


MOSFET MOSFET 40V 48A 11mohms
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Taiwan Semiconductor 4718
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AUD 0.8495
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           Cut Tape       
BSF134N10NJ3 G


Infineon Technologies MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3
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Infineon 4716
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AUD 1.775
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40 A100 V13.4 mOhmsN - Channel     Smd/SmtWDSON - 2ReelSi1 Channel    Optimos
MCH3383-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 4715
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AUD 0.3063
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3.5 A12 V500 mOhmsp - channel 300 mV- 55 C+ 150 C1 Wsmd/smtMCPH - 3Reelsi1 channel- 0.9 V6.2 nCenhancement  
SSM3J143TU,LXHF


MOSFET SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-5.5A
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Toshiba 4714
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AUD 0.2381
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5.5 A20 V29.8 mOhmsP - Channel 1 V-+ 150 C1 WSMD/SMTUFM - 3Cut Tape , ReelSi1 Channel- 8 V , + 6 V12.8 nCEnhancementAEC - Q101 
GT019N04D5


40V 120A 2m@10V 2.5V 1PCSNChannel DFN5x6-8L MOSFETs ROHS
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GOFORD 4714
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AUD 0.3097
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Hot IRFR3710ZTRLPBF


International Rectifier MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
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Infineon 4714
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AUD 1.3554
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3.1 A100 V18 mOhmsN - Channel20 V4 V- 55 C+ 175 C140 WSmd/SmtDPAK - 3ReelSi1 Channel20 V69 nCEnhancement  
R6004PND3FRATL


N-Channel 600V 4A (Tc) 65W (Tc) Surface Mount TO-252
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ROHM 4713
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AUD 1.8312
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4 A600 V1.8 OhmsN - Channel 4.5 V- 55 C+ 150 C65 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 25 V , 25 V11 nCEnhancementAEC - Q101 
SIR580DP-T1-BE3


MOSFETs N-CHANNEL 80-V (D-S) MOSFET
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Vishay 4712
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AUD 1.419
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146 A80 V2.7 mOhmsN - Channel 4 V- 55 C+ 150 C104 WSMD/SMTSO - 8 Si1 Channel- 20 V , + 20 V50.6 nCEnhancement  
DMPH4015SPSQ-13


MOSFETs MOSFET BVDSS: 31V-40V
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Diodes Incorporated 4697
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AUD 1.0193
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DMG1013UW


SOT-323 MOSFETs ROHS
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TECH PUBLIC 4374
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AUD 0.0423
Multiples of: 10

                   
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