MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STU7N60M2


STMicroelectronics MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
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STMicroelectronics 4753
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AUD 0.8514
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5 A600 V860 mOhmsN - Channel 3 V- 55 C+ 150 C60 WThrough HoleIPAK - 3TubeSi1 Channel25 V8.8 nC  Mdmesh
NCV8411DTRKG


MOSFET LS SMART FET MPW
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ON Semiconductor 4753
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AUD 1.3428
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           Cut Tape       
TSM060N03ECP ROG


MOSFET 30V 70Amp N channel Power Mosfet with ESD protection
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Taiwan Semiconductor 4753
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AUD 1.3788
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70 A30 V4.8 mOhmsN - Channel 1 V + 150 C54 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V11.1 nCEnhancement  
RSL020P03FRATR


MOSFET, AEC-Q101, P-CH, -30V, -2A, TUMT6
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ROHM 4751
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AUD 0.3998
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2 A30 V80 mOhmsP Channel 1 V + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi1 Channel- 10 V3.9 nCEnhancementAec - Q101 
RS1E350BNTB1


MOSFET MOSFET
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ROHM 4749
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AUD 2.4615
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80 A30 V1.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C35 WSMD/SMTHSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V185 nCEnhancement  
BSZ100N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
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Infineon 4748
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AUD 0.2948
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            Optimos 3      
AP180N03G-ES


30V 123A 1.7m@10V,20A 50W 2.2V@250uA 1 N-Channel PDFN-8L(5x6) MOSFETs ROHS
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ElecSuper 4748
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AUD 0.309
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SiR5112DP-T1-RE3


MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V
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Vishay 4337
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AUD 1.1887
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40.7 A100 V14.9 mOhmsN - Channel  - 55 C+ 150 C52 WSMD/SMTPOWERPAK SO - 8 Si1 Channel 10.6 nCEnhancement  
SP30P13NJ


PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Siliup 674
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AUD 0.087
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IQD009N06NM5CGATMA1


MOSFETs N
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Infineon 0
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AUD 3.3821
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445 A60 V900 uOhmsN - Channel 3.3 V- 55 C+ 175 C333 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V120 nCEnhancement OptiMOS
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