MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD050N03LGATMA1


Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
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Infineon 4690
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AUD 0.5549
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            Optimos 3      
FQU5N50CTU_WS


Fairchild Semiconductor MOSFET 500V,4.0A NCH MOSFET
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ON Semiconductor 4689
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AUD 1.0173
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4 A500 V1.4 OhmsN - Channel     Through HoleIPAK - 3TubeSi1 Channel     
IRFI740GLCPBF


N-Channel 400 V 5.7A (Tc) 40W (Tc) Through Hole TO-220-3
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Vishay 4688
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AUD 3.1762
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3 FPTube       
FDD9407L_F085


MOSFET 40V 100A N-Chnl Pwr Trench MOSFET
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ON Semiconductor 4686
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AUD 1.8592
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100 A40 V2.9 mOhmsN - Channel 1 V- 55 C+ 175 C227 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V96 nCEnhancement Powertrench
IRFR310PBF


N-Channel 400 V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 4685
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AUD 0.2455
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1.7 A400 V3.6 OhmsN - Channel 2 V- 55 C+ 150 C25 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 20 V , 20 V12 nCEnhancement  
TPH4R008NH1,LQ


MOSFETs 2-5Q1S 80V N-CH MOSFET
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Toshiba 4684
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AUD 0.9947
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116 A80 V4 mOhmsN - Channel 4 V + 150 C170 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V59 nCEnhancement  
PJQ4437EP-AU_R2_002A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 4673
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AUD 0.3973
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41 A30 V15.4 mOhmsP - Channel 2.5 V- 55 C+ 175 C41 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V32 nCEnhancementAEC - Q101 
WST3400S


MOSFET N Trench 30V 5.6A 1V @ 250uA 32 mΩ @ 5A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok 4219
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AUD 0.0699
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BSC050N04LS G


Infineon Technologies MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3
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Infineon 2260
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AUD 0.44
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18 A40 V5 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V47 nCEnhancement Optimos
ZXMP6A17E6TA


SOT23-6 MOSFETs ROHS
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TECH PUBLIC 1886
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AUD 0.1374
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