MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPCA8120,L1Q


MOSFETs
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Toshiba 5193
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AUD 0.6436
Multiples of: 1

45 A30 V4 mOhmsP - Channel 2 V + 150 C45 WSMD/SMTSOP - 8 Si1 Channel- 25 V , + 20 V190 nCEnhancement  
IPG16N10S461AATMA1


MOSFET MOSFET_75V 120V
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Infineon 4723
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AUD 0.8561
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   N - Channel     Smd/SmtTDSON - 8Cut TapeSi1 Channel   Aec - Q101 
IQE004NE1LM7CGATMA1


MOSFETs N
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Infineon 4722
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AUD 1.776
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58 A15 V570 uOhmsN - Channel 1.6 V- 55 C+ 150 C89 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 7 V , + 7 V29 nCEnhancement  
DMT36M1LPS-13


MOSFET MOSFETBVDSS: 25V-30V
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Diodes Incorporated 4721
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AUD 0.2463
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65 A30 V4.8 mOhmsN - Channel 1 V- 55 C+ 150 C42 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V16.7 nCEnhancement  
GT090N06D52


60V 40A 62W 9m@10V 2.5V@250uA 2 N-Channel DFN(5x6) MOSFETs ROHS
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GOFORD 4719
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AUD 0.4445
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IQE004NE1LM7ATMA1


MOSFETs N
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Infineon 4719
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AUD 1.776
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58 A15 V570 uOhmsN - Channel 1.6 V- 55 C+ 150 C89 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 7 V , + 7 V29 nCEnhancement  
TPCA8123,L1Q


MOSFET P Trench 60V 50A 3V @ 1mA 14.9 mΩ @ 25A,6V SOP Advance RoHS
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Toshiba 4719
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AUD 5.2365
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TSM110NB04LDCR RLG


MOSFET MOSFET 40V 48A 11mohms
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Taiwan Semiconductor 4718
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AUD 0.8495
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           Cut Tape       
IPG20N10S4L-22A


MOSFET MOSFET_75V 120V
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Infineon 4711
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AUD 1.1378
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20 A100 V20 mOhms , 20 mOhmsN - Channel 1.1 V- 55 C+ 175 C60 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V27 nC , 27 nCEnhancementAec - Q101 
TN2435N8-G


Transistor: N-MOSFET; unipolar; 350V; 1A; 1.6W; SOT89-3
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Microchip 2751
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AUD 1.6746
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365 mA350 V6 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Enhancement  
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