MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISZ056N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4681
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AUD 0.3693
Multiples of: 1

72 A30 V5.6 mOhmsN - Channel 2.35 V- 55 C+ 175 C52 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.4 nCEnhancement StrongIRFET
650SJ520


650V 8A 500m 1PCSNChannel TO-252 MOSFETs ROHS
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HL 4681
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AUD 0.3832
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PSMN028-100YS,115


MOSFET N-CHANNEL 100V STD LEVEL MOSFET
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Nexperia 4674
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AUD 0.5434
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42 A100 V52 mOhmsn - channel 4.7 V- 55 C+ 175 C89 Wsmd/smtSOT - 669Reelsi1 channel20 V33 nCenhancement  
IPG20N10S4L-22A


MOSFET MOSFET_75V 120V
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Infineon 4671
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AUD 1.1804
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20 A100 V20 mOhms , 20 mOhmsN - Channel 1.1 V- 55 C+ 175 C60 WSMD/SMTTDSON - 8Reel , Cut TapeSi2 Channel- 16 V , 16 V27 nCEnhancementAEC - Q101 
SP30N03ANK


PDFNWB-8L(5x6) MOSFETs ROHS
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Siliup 4670
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AUD 0.1273
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FH3055GS


30V PDFN-8L(5x6) MOSFETs ROHS
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Xinfeihong 4651
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AUD 0.1469
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P140LF4QN-5071


Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
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Shindengen 4643
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AUD 1.1534
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            EETMOS4      
RXH090N03TB1


MOSFET MOSFET
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ROHM 4597
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AUD 0.921
Multiples of: 1

9 A30 V17 mOhmsN - Channel 2.5 V + 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V6.8 nCEnhancement  
BSS138KDW


SOT-363 MOSFETs ROHS
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SLKORMICRO 4578
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AUD 0.021
Multiples of: 20

                   
IPN70R600P7SATMA1


700V 8.5A 6.9W 600mO@10V,1.8A N Channel SOT-223 MOSFETs ROHS
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Infineon 2910
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AUD 0.3526
Multiples of: 3000

8.5 A700 V490 mOhmsN - Channel 2.5 V- 40 C+ 150 C6.9 WSmd/SmtPG - SOT - 223 - 3Cut TapeSi1 Channel16 V10.5 nCEnhancement Coolmos
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