MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FH3055GS


30V PDFN-8L(5x6) MOSFETs ROHS
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Xinfeihong 4738
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AUD 0.1469
Multiples of: 5

                   
DMN60H080DS-13


MOSFET MOSFETBVDSS: 501V-650V
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Diodes Incorporated 4733
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AUD 0.111
Multiples of: 5

80 mA600 V67 OhmsN - Channel 1.5 V- 55 C+ 150 C1.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V1.7 nCEnhancement  
BSF134N10NJ3 G


Infineon Technologies MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3
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Infineon 4716
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AUD 1.775
Multiples of: 1

40 A100 V13.4 mOhmsN - Channel     Smd/SmtWDSON - 2ReelSi1 Channel    Optimos
IRLML9301TRPBF-VB


30V 5.6A P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 4715
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AUD 0.0829
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SSM3J143TU,LXHF


MOSFET SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-5.5A
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Toshiba 4714
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AUD 0.2381
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5.5 A20 V29.8 mOhmsP - Channel 1 V-+ 150 C1 WSMD/SMTUFM - 3Cut Tape , ReelSi1 Channel- 8 V , + 6 V12.8 nCEnhancementAEC - Q101 
R6004PND3FRATL


N-Channel 600V 4A (Tc) 65W (Tc) Surface Mount TO-252
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ROHM 4713
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AUD 1.8312
Multiples of: 2500

4 A600 V1.8 OhmsN - Channel 4.5 V-+ 150 C65 WSMD/SMTTO - 252 - 3/2Reel , Cut TapeSi1 Channel- 25 V , + 25 V11 nCEnhancementAEC - Q101 
IQD020N10NM5CGATMA1


MOSFETs N
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Infineon 4713
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AUD 3.9877
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273 A100 V2.05 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V107 nCEnhancement OptiMOS
RQ3E120BNTB


N-Channel 30 V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
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ROHM 4710
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AUD 0.2824
Multiples of: 1

12 A30 V6.6 mOhmsN - Channel 2.5 V  2 WSmd/SmtH SMT - 8Tape And ReelSi1 Channel20 V29 nCEnhancement  
IAUC60N04S6L045HATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 4710
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AUD 0.8357
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           Cut Tape       
NTTFS5826NL(XBLW)


60V 30A 1 N-Channel DFN-8L(3x3) MOSFETs ROHS
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XBLW 4544
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AUD 0.1539
Multiples of: 5

                   
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