MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
20P03


30V 20A 36mΩ 2.5V P Channel TO-252 MOSFETs ROHS
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HL 8633
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AUD 0.0705
Multiples of: 10

                   
BUK7613-60E,118


MOSFET N-channel TrenchMOS standard level FET
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Nexperia 4656
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AUD 1.1673
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58 A60 V9.44 mOhmsN - Channel 3 V- 55 C+ 175 C96 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V22.9 nCEnhancement  
TSM480P06CP ROG


MOSFET -60V -20A Single P-Channel Power MOSFET
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Taiwan Semiconductor 4654
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AUD 0.4466
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20 A60 V39 mOhmsP - Channel 1.6 V- 50 C+ 150 C40 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V22.4 nCEnhancement  
IRLML6402


20V 3.6A 1.7W 70mΩ@10V 1V@250uA P Channel SOT-23 MOSFETs ROHS
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HXY MOS 4636
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AUD 0.0359
Multiples of: 20

                   
FDS3672-NL-VB


100V 6.4A null SO-8 MOSFETs ROHS
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VBsemi Elec 4613
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AUD 0.4858
Multiples of: 1

                   
CJU50N06A


60V 50A 13mΩ@10V 2.5V N Channel TO-252-2L MOSFETs ROHS
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Changjing Electronics Technology 4592
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AUD 0.3331
Multiples of: 5

                   
TNM03K20BX


20V 500mA 6V 1PCSNChannel DFN1006-3L MOSFETs ROHS
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Shenzhen JingYang 4588
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AUD 0.0258
Multiples of: 10

                   
WSE3088


MOSFET N Trench 30V 7A (Tc) 1.5V @ 250uA 28 mΩ @ 7A,4.5V SOT-89 (SOT-89-3) RoHS
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Winsok 2880
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AUD 0.2281
Multiples of: 5

                   
BSZ042N06NSATMA1


Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
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Infineon 333
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AUD 1.1914
Multiples of: 1

98 A60 V4.9 mOhmsN - Channel 2.8 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V27 nCEnhancement OptiMOS
STD9N60M2


MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh II Plus
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STMicroelectronics 64
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AUD 0.6748
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5.5 A650 V780 mOhmsn - channel25 V3 V- 55 C+ 150 C60 Wsmd/smtDPAK - 2Reelsi1 channel25 V10 nC  mdmesh
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