MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CRSM038N10N4


100V 100A 139W 3mΩ@10V,50A 3V@250uA 40pF@50V N Channel 3162pF@50V 49.6nC@10V -55℃~+150℃@(Tj) DFN5x6 MOSFETs ROHS
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CRMICRO 34219
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AUD 0.573
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MCAC1D1N03YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 4794
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AUD 1.5679
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240 A30 V1.7 mOhmsN - Channel 1.8 V- 55 C+ 175 C104 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V114 nCEnhancement  
IPB80P04P405ATMA2


P-Channel 40V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2
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Infineon 4793
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AUD 2.4825
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          TO - 263 - 3 , D²PAK (2 Leads + Tab) , TO - 263ABDigi - Reel®Mosfet (Metal Oxide)      
HYG045P03LQ1C2


30V 80A 62.5W 3.8mΩ@10V,20A 1.6V@250uA 575pF@25V P Channel 7660pF@25V 313.3nC@10V -55℃~+175℃@(Tj) PPAK5x6-8 MOSFETs ROHS
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HuaYi 4792
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AUD 0.3146
Multiples of: 5

                   
RJK03M1DPA-00#J5A


Trans MOSFET N-CH 30V 50A 8-Pin WPAK EP T/R
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Renesas 4792
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AUD 1.8705
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50 A  N    45 WSurface Mount Tape And Reel    Enhancement  
Hot IRFB3206PBF


Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
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Infineon 3811
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AUD 1.4809
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210 A60 V2.4 mOhmsN - Channel    300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
SUM90P10-19L-E3


P-Channel 100 V 90A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
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Vishay 3721
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AUD 3.2507
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90 A100 V19 mOhmsP - Channel 1 V- 50 C+ 175 C375 WSmd/SmtTO - 263 - 3ReelSi1 Channel- 10 V217 nCEnhancement Trenchfet
DMC4029SSDQ-13


MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
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Diodes Incorporated 3537
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AUD 0.4942
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7 A40 v , - 40 V20 mOhms , 40 mOhmsN And P - Channel20 V3 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8ReelSi2 Channel20 V19.1 nC , 21.5 nCEnhancementAec - Q101 
SQJ186ELR-T1_GE3


MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
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Vishay 2975
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AUD 0.729
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BSC010N04LSIATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
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Infineon 793
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AUD 1.3019
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