MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7172ADP-T1-RE3


MOSFET 200V Vds 20V Vgs PowerPAK SO-8
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Vishay 4760
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AUD 0.883
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17.2 A200 V70 mOhmsN - Channel 4 V- 55 C+ 150 C52 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V19.5 nCEnhancement  
DMN2044UCB4-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 4758
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AUD 0.2939
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4.5 A20 V40 mOhmsN - Channel 400 mV- 55 C+ 150 C1.18 WSmd/SmtU - WLB1010 - 4 Si1 Channel4.5 V13.1 nCEnhancement  
DMC3730UVT-7


Trans MOSFET Array N-CH/P-CH 25V/-25V 0.68A/-0.46A 6-Pin TSOT-26 T/R
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Diodes Incorporated 4755
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AUD 0.1412
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680 mA , 460 mA25 V450 mOhms , 1.1 OhmsN - Channel, P - Channel 450 mV , 1.1 V- 55 C+ 175 C0.9 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel8 V1.64 nC , 1.1 nCEnhancement  
TSM085P03CS RLG


MOSFET -30V -34A Single P-C hannel Power MOSFET
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Taiwan Semiconductor 4755
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AUD 1.6385
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           Cut Tape       
SP3033CNJ


30V 1 N-Channel + 1 P-Channel PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Siliup 4753
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AUD 0.0548
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STL45N10F7AG


DFN5x6-8L MOSFETs ROHS
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Leiditech 4748
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AUD 0.6889
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NTS4409NT1G


MOSFET NFET 25V/8V 75mA 350
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ON Semiconductor 4743
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AUD 0.1074
Multiples of: 5

750 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSC - 70 - 3Cut TapeSi1 Channel4.5 V1.2 nCEnhancement  
AS2305


MOSFET P Trench 20V 3.9A 1.5V @ 250uA 65 mΩ @ 3.9A,4.5V SOT-23 (SOT-23-3) RoHS
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AnBon 4733
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AUD 0.0385
Multiples of: 20

                   
BSS306N


30V 2A 900mW 90m@10V,2A 1.5V@250uA SOT-23 MOSFETs ROHS
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TECH PUBLIC 4723
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AUD 0.0555
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NCEP1545K


MOSFET TO-252 RoHS
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NCE Power 4681
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AUD 0.6133
Multiples of: 1

                   
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