MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD11N65M2


STMicroelectronics MOSFET
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STMicroelectronics 4801
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AUD 1.222
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7 A650 V670 mOhmsN - Channel 3 V- 55 C+ 150 C85 WSmd/SmtTO - 252 - 3ReelSi 25 V12.5 nC  Mdmesh Ii Plus
ESN4485


40V 10A 3.1W 10.5m@10V,10A 1.6V@250uA 1PCSPChannel PDFN-8L(3x3) MOSFETs ROHS
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ElecSuper 4800
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AUD 0.2789
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R6009KND3TL1


MOSFETs MOSFET 600V NCH 9A TO-252
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ROHM 4800
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AUD 1.1706
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9 A600 V535 mOhmsN - Channel 5 V- 55 C+ 150 C94 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16.5 nCEnhancement  
IRF9630PBF-BE3


P-Channel 200V 6.5A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 4800
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AUD 1.5905
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6.5 A200 V800 mOhmsP - Channel 4 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V29 nCEnhancement  
IXTP32P05T


MOSFET 32 Amps 50V 0.036 Rds
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IXYS 4799
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AUD 1.8224
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32 A50 V39 mOhmsP - Channel 4.5 V- 55 C+ 150 C83 WThrough HoleTO - 220 - 3TubeSi1 Channel15 V46 nCEnhancement Trenchp
FCD900N60Z


Fairchild Semiconductor MOSFET 600V N-Channel MOSFET
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ON Semiconductor 4798
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AUD 0.7469
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4.5 A650 V900 mOhmsN - Channel 3.5 V- 55 C+ 150 C2 WSmd/SmtDPAK - 3ReelSi1 Channel20 V13 nC  Superfet Ii
HSW6604


1PCSN-Channel&1PCSP-Channel SOT-23 MOSFETs ROHS
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HUASHUO 4797
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AUD 0.0654
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HP8MB5TB1


MOSFETs 40V 16.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MB5 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4796
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AUD 0.9687
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16.5 A , 18 A60 V46 mOhms , 44 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C20 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.5 nC , 17.2 nCEnhancement  
HSM6006


60V 6.3A 18mΩ@10V,6A 1.5W 2.5V@250uA null SOP-8 MOSFETs ROHS
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HUASHUO 4794
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AUD 0.2698
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NTTFSSCH0D7N02X


MOSFETs T10 25V PC33 SOURCE DOWN
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ON Semiconductor 1850
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AUD 1.279
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310 A25 V580 uOhmsN - Channel 2 V- 55 C+ 150 C87 WSMD/SMTWDFN - 9Reel , Cut TapeSi1 Channel- 12 V , + 16 V33 nCEnhancement  
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