MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR9024NTRPBF


MOSFET P Trench 55V 11A 4V @ 250uA 175 mΩ @ 6.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 18197
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AUD 0.2031
Multiples of: 5

            Hexfet®      
DMG3404L-7


MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC
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Diodes Incorporated 5102
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AUD 0.1009
Multiples of: 5

5.8 A30 V21 mOhmsN - Channel 1 V- 55 C+ 150 C1.33 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V13.2 nCEnhancement  
LBSS138WT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V SC-70 RoHS
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Leshan 4921
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AUD 0.028
Multiples of: 20

                   
SPD15P10PL G


100V 15A 200mO@10V,11.3A 128W P Channel TO-252-2(DPAK) MOSFETs ROHS
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Infineon 4920
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AUD 1.3794
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15 A100 V140 mOhmsP - Channel 2 V- 55 C+ 175 C128 WSmd/SmtTO - 252ReelSi1 Channel20 V62 nCEnhancement Sipmos
RD3H045SPTL1


MOSFET Pch -45V -4.5A TO-252 (DPAK)
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ROHM 4918
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AUD 0.7752
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4.5 A45 V155 mOhmsP - Channel 3 V- 55 C+ 150 C15 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V12 nCEnhancement  
WSD40110DN56G


40V 110A null DFN-8(5x6) MOSFETs ROHS
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Winsok 4913
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AUD 0.6728
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AUIRF7647S2TR


International Rectifier MOSFET 100V AUTO GRADE 1 N-CH HEXFET
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Infineon 4912
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AUD 1.5825
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24 A100 V26 mOhmsN - Channel  - 55 C+ 175 C41 WSmd/SmtDirectfet - 5ReelSi1 Channel20 V14 nCEnhancementAec - Q101 
RQ7G080BGTCR


MOSFET LOW POWER MOSFET
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ROHM 4911
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AUD 0.7006
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8 A40 V16.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.6 nCEnhancement  
BSC032NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
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Infineon 4909
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AUD 0.4679
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            Optimos      
FQPF8N80CYDTU


N-Channel 800 V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 (Y-Forming)
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ON Semiconductor 2975
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AUD 2.1835
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8 A800 V1.55 Ohmsn - channel  - 55 C+ 150 C59 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
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