MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP14NK60ZFP


Transistor: N-MOSFET; unipolar; 600V; 8.5A; 40W; TO220FP
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STMicroelectronics 5213
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AUD 2.6256
Multiples of: 1

13.5 A600 V500 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V75 nCEnhancement SuperMESH
SSM6K404TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=3.0A RDSON=0.055Ohm @ 4V in UF6 package
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Toshiba 5212
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AUD 0.1867
Multiples of: 1

3 A20 V55 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel10 V5.9 nCEnhancement U - Mosiii
FDS6690AS


MOSFET 30V NCH POWER TRENCH SYNCFET
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ON Semiconductor 5209
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AUD 0.6541
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10 A30 V10 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSO - 8Cut Tapesi1 channel20 V enhancement powertrench syncfet
IPD60R385CPATMA1


MOSFET N-Ch 600V 9A DPAK-2
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Infineon 5206
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AUD 1.4021
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9 A600 V350 mOhmsN - Channel 2.5 V- 55 C+ 150 C83 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V22 nCEnhancement Coolmos
NVBLS1D5N10MCTXG


MOSFETs PTNG 100V STD TOLL
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ON Semiconductor 5206
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AUD 5.4529
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300 A100 V3.9 mOhmsN - Channel 4 V- 55 C+ 175 C331 WSMD/SMTH - PSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V131 nCEnhancement PowerTrench
MCH6353-TL-W


MOSFET Pwr MOSFET 12V 6A 35mOhm SGL P-CH
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ON Semiconductor 5194
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AUD 0.2528
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- 6 A- 12 V35 mOhmsP - Channel     Smd/SmtSOT - 363 - 6Cut TapeSi1 Channel     
APG024N04G


40V 120A 2mΩ@20V,120A null PDFN-8L(5X6) MOSFETs ROHS
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Quan Li 5168
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AUD 0.6019
Multiples of: 1

                   
BSH108,215


N-Channel 30 V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB
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Nexperia 4733
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AUD 0.2351
Multiples of: 5

1.9 A30 V120 mOhmsN - Channel 1 V- 65 C+ 150 C830 mWSmd/SmtSOT - 23ReelSi1 Channel10 V6.4 nCEnhancement  
TPNCE01P30K


TO-252-3L MOSFETs ROHS
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TECH PUBLIC 4196
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AUD 0.5039
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QS8K11TCR


MOSFET 4V Drive Nch+Nch Si MOSFET
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ROHM 531
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AUD 0.6649
Multiples of: 1

3.5 A30 V35 mOhms , 35 mOhmsN - Channel 1 V + 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi2 Channel20 V7 nC , 7 nCEnhancement  
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