MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3070SSN-7


MOSFET 30V N-CH MOSFET
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Diodes Incorporated 14349
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AUD 0.1543
Multiples of: 1

4.2 A30 V24 mOhmsN - Channel 1.1 V- 55 C+ 150 C780 mWSmd/SmtSC - 59 - 3Cut TapeSi1 Channel20 V13.2 nCEnhancement  
TM003EN06I


60V 300mA 2 SOT-23 MOSFETs ROHS
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Tritech-MOS 5141
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AUD 0.0158
Multiples of: 50

                   
IPP147N12N3GXKSA1


Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
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Infineon 5141
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AUD 1.0213
Multiples of: 1

            Optimos 3      
VN2460N8-G


Transistor: N-MOSFET; unipolar; 600V; 0.25A; 1.6W; SOT89-3
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Microchip 5141
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AUD 1.3806
Multiples of: 500

200 mA600 V20 OhmsN - Channel 1.5 V- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel10 V Enhancement  
MOT4N70C


700V 4A 49W 2.6@10V,2A 4V@250uA 1PCSNChannel TO-251 MOSFETs ROHS
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MOT 5136
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AUD 0.1838
Multiples of: 5

                   
SIR464DP-T1-GE3


N-Channel 30 V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 5134
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AUD 0.4378
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
RD3L080SNFRATL


MOSFET Nch 60V Vdss 8A ID TO-252(DPAK); TO-252
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ROHM 5132
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AUD 0.9286
Multiples of: 1

8 A60 V80 mOhmsN - Channel 1 V- 55 C+ 150 C15 WSmd/SmtTO - 252 - 3Cut Tape 1 Channel20 V9.4 nCEnhancement  
IRF1104PBF


MOSFET N Trench 40V 100A (Tc) 4V @ 250uA 9 mΩ @ 60A,10V TO-220AB RoHS
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Infineon 5120
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AUD 1.3019
Multiples of: 1

100 A40 V9 mOhmsN - Channel20 V - 55 C+ 175 C170 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V62 nCEnhancement  
TPM20P7S3L


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4680
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AUD 0.1197
Multiples of: 5

                   
RS1E260ATTB1


MOSFET PCH -30V -80A POWER
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ROHM 4374
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AUD 2.4955
Multiples of: 1

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