MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Si2301BDS-HXY


20V 3A 60m 1PCSPChannel SOT-23 MOSFETs ROHS
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HXY MOS 5735
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0505

Multiples of: 10

                   
RXL035N03TCR


MOSFET MOSFET
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ROHM 5732
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.5058

Multiples of: 1

3.5 A30 V50 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 363T - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V3.3 nCEnhancement  
SQ2319ADS-T1_BE3


MOSFET P-CHANNEL 40V D-S
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Vishay 5732
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.5792

Multiples of: 1

           Cut Tape       
HT8KC6TB1


MOSFETs 60V 15A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 5732
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.1332

Multiples of: 1

15 A60 V29 mOhmsN - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V7.6 nCEnhancement  
IQE065N10NM5SCATMA1


MOSFET
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Infineon 5730
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 3

Multiples of: 1

13 A100 V6.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V43 nCEnhancement  
SI2300-TP


MOSFET N-Ch Enh FET 20Vds 4.5A 10Vgs 1W
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Micro Commercial Components (MCC) 5729
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.1449

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4.5 A20 V25 mOhmsN - Channel 0.5 V- 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V4.2 nCEnhancement  
PSMQC060N06LS1-AU_R2_006A1


MOSFETs 60V 6m ohms AECQ101 qualified Solution for Automotive lighting
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Panjit 5729
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.0249

Multiples of: 1

68 A60 V6 mOhmsN - Channel 3 V- 55 C+ 150 C50 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancementAEC - Q101 
IRF9Z34NPBF


60V 20A 20W 87mΩ@10V,20A 1.7V@250uA P Channel TO-220 MOSFETs ROHS
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JSMSEMI 5727
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.3135

Multiples of: 5

                   
DMT6008LFG-7


Diodes Incorporated MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF
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Diodes Incorporated 5727
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.5744

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13 A60 V6.5 mOhmsN - Channel12 V2 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel12 V22.4 nCEnhancement Dmt6
MMFTP6401-HAF


TO-236-3 MOSFETs ROHS
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Semtech 5725
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0496

Multiples of: 10

                   
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