MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
EMH2408-TL-H


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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ON Semiconductor 5111
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AUD 0.2864
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4 A20 V45 mOhmsn - channel     smd/smtEMH8 - 8Reelsi2 channel     
NTMFS4821NT1G


N-Channel 30 V 8.8A (Ta), 58.5A (Tc) 870mW (Ta), 38.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ON Semiconductor 5104
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AUD 0.4022
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   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8 FLReel       
IPB038N12N3 G


MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
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Infineon 5098
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AUD 3.2343
Multiples of: 1

120 A120 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V211 nCEnhancement Optimos
IRF510PBF-BE3


N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 5080
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AUD 0.5631
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5.6 A100 V540 mOhmsN - Channel 4 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V8.3 nCEnhancement  
4559A


SOP-8 MOSFETs ROHS
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HL 4699
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AUD 0.1078
Multiples of: 5

                   
DMP3045LVT-7


MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 3K
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Diodes Incorporated 4394
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AUD 0.1872
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5.4 A30 V42 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.2 WSMD/SMT  Si1 Channel- 20 V , + 20 V7 nCEnhancement  
ZXMS6004FF-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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Diodes Incorporated 4051
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AUD 0.4696
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1.3 A60 V500 mOhmsN - Channel 1.5 V- 40 C+ 150 C1.5 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel--Enhancement  
BUK7Y18-75B,115


NXP Semiconductors MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Nexperia 3830
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AUD 0.7766
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49 A75 V13.8 mOhmsN - Channel     Smd/SmtLFPAK56 - 5ReelSi1 Channel     
BSC047N08NS3GATMA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8
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Infineon 3589
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AUD 1.6343
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            Optimos 3      
DMP2160U-7


P-Channel 20 V 3.2A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 2172
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AUD 0.0943
Multiples of: 5

3.3 A20 V75 mOhmsP - Channel 400 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V6.5 nCEnhancement  
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