MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPT014N08NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 5184
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AUD 4.1045
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331 A80 V1.4 mOhmsN - Channel 3.8 V- 55 C+ 175 C300 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V160 nCEnhancement  
FSS2300 2300


SOT-23-3L MOSFETs ROHS
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FOSAN 5179
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AUD 0.0276
Multiples of: 20

                   
RRL035P03TR


ROHM Semiconductor MOSFET Trans MOSFET P-CH 30V 3.5A
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ROHM 5173
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AUD 0.2167
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- 3.5 A- 30 V50 mOhmsP - Channel     Smd/SmtTUMT - 6ReelSi      
IQE022N06LM5SCATMA1


MOSFETs N
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Infineon 5172
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AUD 2.09
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151 A60 V N - Channel 2.3 V- 55 C+ 175 C SMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V Enhancement OptiMOS
BSS138P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 5092
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AUD 0.0175
Multiples of: 50

                   
RQ5E040AJTCL


MOSFET NPN Low VCE(sat) Transistor
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ROHM 4841
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AUD 0.2528
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4 A30 V27 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel+/- 12 V Enhancement  
RUC002N05T116


ROHM Semiconductor MOSFET Ultra Lo Vtg 1.2V drive Nch MOSFET
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ROHM 4617
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AUD 0.0336
Multiples of: 10

200 mA50 V1.6 OhmsN - Channel 300 mV- 55 C+ 150 C200 mWSmd/SmtSST - 3ReelSi1 Channel8 V Enhancement  
CSD19532Q5B


N-Channel 100 V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)
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Texas Instruments 601
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AUD 2.2337
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124 A100 V4.9 mOhmsN - Channel20 V2.6 V- 55 C+ 150 C3.1 WSmd/SmtVSON - 8 CLIPReelSi1 Channel10 V48 nCEnhancement Nexfet
SISA14DN-T1-GE3


Vishay Semiconductors MOSFET 30V 5.1mOhm10V 14.1A N-Ch G-IV
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Vishay 525
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AUD 0.6141
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20 A30 V5.1 mOhmsN - Channel 1.1 V- 55 C+ 150 C26.5 WSmd/SmtPOWERPAK - 1212 - 8Reel-1 Channel- 16 v , + 20 V19.4 nCEnhancement Trenchfet
AOD4130


TO-252 MOSFETs ROHS
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TECH PUBLIC 281
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AUD 0.1713
Multiples of: 5

                   
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