MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS5C638NLT1G


MOSFET 60V 3.0 MOHM T6 S08FL SIN
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ON Semiconductor 5172
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AUD 1.691
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133 A60 V3 mOhmsN - Channel 1.2 V- 55 C+ 175 C100 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V40.7 nCEnhancementAec - Q101 
IQE031N08LM6CGATMA1


MOSFETs OptiMOS 6 Power-Transistor, 80 V
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Infineon 5168
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AUD 2.1686
Multiples of: 1

127 A80 V3.15 mOhmsN - Channel 2.3 V- 55 C+ 175 C125 WSMD/SMTPG - TTFN - 9Reel , Cut TapeSi1 Channel20 V33 nCEnhancement OptiMOS
IQEH64NE2LM7UCGSCATMA1


MOSFETs OptiMOS 7 Power -Transistor, 25 V
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Infineon 5167
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AUD 1.6029
Multiples of: 1

348 A25 V640 uOhmsN - Channel 2 V- 55 C+ 175 C130 WSMD/SMT Reel , Cut TapeSi1 Channel16 V22 nCEnhancement OptiMOS
FDMC8884


MOSFET 30V N-Channel Power Trench
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ON Semiconductor 5166
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AUD 0.5227
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9 A30 V19 mOhmsn - channel  - 55 C+ 150 C2.3 Wsmd/smtPOWER 33Reelsi1 channel20 V5 nC , 10 nCenhancement powertrench
IAUCN08S7N045TATMA1


MOSFETs 80 V, N-Ch, 4.54 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
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Infineon 5162
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AUD 1.309
Multiples of: 1

103 A80 V4.54 mOhmsN - Channel 3.2 V- 55 C+ 175 C98 WSMD/SMTPG - LHDSO - 10 - 1Reel , Cut TapeSi1 Channel20 V27 nCEnhancement OptiMOS
IQEH50NE2LM7UCGSCATMA1


MOSFETs OptiMOS 7 Power -Transistor, 25 V
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Infineon 5161
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AUD 1.6971
Multiples of: 1

298 A25 V500 uOhmsN - Channel 2 V- 55 C+ 175 C150 WSMD/SMT Reel , Cut TapeSi1 Channel16 V27 nCEnhancement OptiMOS
AO3407


SOT-23 MOSFETs ROHS
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Bourne 5160
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AUD 0.0556
Multiples of: 10

                   
RF4P060BGTCR


MOSFETs RF4P060BG is a power MOSFET with low on-resistance and High power small mold package, suitable for switching.
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ROHM 5160
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AUD 0.3991
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6 A100 V78 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTDFN - 2020 - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V6.7 nCEnhancement  
IAUCN08S7N019ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 5158
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AUD 2.0743
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200 A80 V2.3 mOhmsN - Channel 3.2 V- 55 C+ 175 C169 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V63 nCEnhancementAEC - Q101OptiMOS
PJA3405_R1_00001


MOSFET /A05/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-30TMP/NF30T-QI08/PJ///
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Panjit 4898
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AUD 0.0707
Multiples of: 10

                   
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