MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SDV301N3


SOT-883 MOSFETs ROHS
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Shikues 5674
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AUD 0.0154
Multiples of: 50

                   
SQ3457EV-T1_BE3


MOSFET P-CHANNEL 30V D-S
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Vishay 5672
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AUD 0.4731
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6.8 A30 V35 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V14 nCEnhancement TrenchFET
DMP32D4SFB-7B


MOSFET 30V P-CH MOSFET
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Diodes Incorporated 5671
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AUD 0.0807
Multiples of: 1

400 mA30 V2.4 OhmsP - Channel 2.3 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel20 V1.3 nCEnhancement  
STD30NF06L


TO-252 MOSFETs ROHS
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Youtai 5671
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AUD 0.2671
Multiples of: 5

                   
BRCS3401MC


30V 4.2A 52mO@10V,4.2A 1.4W P Channel SOT-23 MOSFETs ROHS
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Blue Rocket 5669
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AUD 0.0334
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SSM6K516NU,LF


N-Channel 30V 6A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
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Toshiba 5669
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AUD 0.1436
Multiples of: 3000

6 A30 V46 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTUDFN - 6BReel , Cut TapeSi1 Channel- 12 V , + 20 V2.5 nCEnhancement  
WST2339


MOSFET P Trench 20V 7.1A 1V @ 250uA 19 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok 5669
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AUD 0.1485
Multiples of: 5

                   
SIRA10DDP-T1-GE3


MOSFETs 30V Vds TrenchFET PowePAK SO-8
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Vishay 5669
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AUD 0.3362
Multiples of: 1

96 A30 V3.1 mOhmsN - Channel 2.4 V- 55 C+ 150 C43 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V24.1 nCEnhancement  
YJG80G06A


Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
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Yangjie 5669
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AUD 0.68
Multiples of: 1

            Split Gate Trench      
DMP68D1LVQ-7


MOSFETs BSS Family SOT563 T&R 3K
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.1187
Multiples of: 1

238 mA60 V8 OhmsP - Channel 2.1 V- 55 C+ 150 C500 mWSMD/SMTSOT - 563 - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V600 pCEnhancement  
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