MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVTFS005N04CTAG


MOSFET T6 40V SG NCH U8FL
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ON Semiconductor 5148
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AUD 1.0368
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FDP023N08B_F102


MOSFET N-Channel PowerTrench MOSFET 75V, 242A, 2.35mOhms
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ON Semiconductor 5142
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AUD 3.3657
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242 A75 V1.96 mOhmsN - Channel20 V3.8 V- 55 C+ 175 C245 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V150 nCEnhancement  
NVTFS5C478NLWFTAG


MOSFET AFSM T6 40V LL U8FL WF
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ON Semiconductor 5141
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AUD 0.9276
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26 A40 V11.5 mOhmsn - channel 1.2 V- 55 C+ 175 C20 Wsmd/smtWDFN - 8Cut Tapesi1 channel20 V8 nCenhancementaec - q100 
SQA468CEJW-T1_GE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 5141
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AUD 0.1886
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IRFP4568PBF


MOSFET N Trench 150V 171A 5V @ 250uA 5.9 mΩ @ 103A,10V TO-247 (AC) RoHS
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Infineon 5070
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AUD 2.3917
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171 A150 V4.8 mOhmsN - Channel    517 WThrough HoleTO - 247ACTubeSi1 Channel30 V151 nC   
WPM2093-3/TR


SOT-723 MOSFETs ROHS
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Will Semiconductor 4966
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AUD 0.0641
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WSD3045DN


MOSFET N & P Trench 30V 18A (Tc),15.3A (Tc) 2.5V @ 250uA 10.5 mΩ @ 6A,10V;24 mΩ @ 6A,10V DFN3x3-8-8 RoHS
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Winsok 4946
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AUD 0.2928
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HYG045N03LA1C2


30V 78A 3.6mΩ@10V,20A 52W N Channel DFN-8(5.2x5.9) MOSFETs ROHS
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HuaYi 4898
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AUD 0.1715
Multiples of: 5

                   
WPM2015-MS


20V 3A 80mΩ@4.5V,2.8A 400mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.5nC@4.5V +150℃@(Tj) SOT-23-3 MOSFETs ROHS
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MSKSEMI 4665
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AUD 0.0695
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FDMC8882


MOSFET 30V N-Channel Power Trench 174 MOSFET
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ON Semiconductor 2242
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AUD 0.6124
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16 A30 V14.3 mOhmsN - Channel  - 55 C+ 150 C18 WSmd/SmtMLP 3.3 x 3.3ReelSi1 Channel20 V7 nC , 14 nC  Powertrench
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