MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMT6018LDR-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 5119
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AUD 0.6272
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          V - DFN3030 - 8Cut TapeSi      
IAUC70N08S5N074ATMA1


MOSFET MOSFET_75V 120V
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Infineon 5118
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AUD 1.0562
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RTM002P02T2L


MOSFET P-CH 20V 200MA
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ROHM 5116
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AUD 0.0689
Multiples of: 5

200 mA20 V2 OhmsP - Channel    150 mWSmd/SmtVMT - 3ReelSi1 Channel12 V Enhancement  
BSC010NE2LSI


MOSFET N-Channel 25V MOSFET
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Infineon 5116
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AUD 1.0409
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100 A25 V1.05 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel10 V59 nCEnhancement Optimos
TPM0730N5X


30V 70A 2.5V 1PCSPChannel PDFN-8(5x5.8) MOSFETs ROHS
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Shenzhen JingYang 5114
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AUD 0.5851
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ISZ75DP15LMATMA1


MOSFETs N
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Infineon 5114
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AUD 0.6148
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5.1 A150 V750 mOhmsP - Channel 2 V- 55 C+ 175 C50 WSMD/SMTTSDSON - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V22.9 nCEnhancement  
STU2LN60K3


MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3
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STMicroelectronics 5114
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AUD 0.6354
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2 A600 V4 Ohmsn - channel 3.75 V- 55 C+ 150 C45 Wthrough holeIPAK - 3Tubesi1 channel30 V12 nCenhancement supermesh
FDMC86320


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 5114
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AUD 1.3654
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22 A80 V11.7 mOhmsN - Channel   + 150 C40 WSmd/SmtPOWER - 33ReelSi1 Channel 24 nC , 29 nC   
DMTH4011SPD-13


MOSFET MOSFET BVDSS 31V 40V
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Diodes Incorporated 4918
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AUD 0.4301
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42 A40 V15 mOhmsN - Channel 2 V- 55 C+ 175 C37.5 WSmd/SmtPowerdi5060 - 8Cut TapeSi2 Channel20 V10.6 nCEnhancement  
GS66504B-MR


MOSFET 650V 15A GaN E-mode GaNPX package Bottom-side cooled
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Gan Systems 4104
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AUD 12.4612
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