MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE0115K


MOSFET N Trench 100V 15A 2.5V @ 250uA 90 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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NCE Power 6809
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AUD 0.1935
Multiples of: 5

                   
AP25P06K


60V 25A 49mΩ@10V,12A 60W P Channel TO-252 MOSFETs ROHS
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Quan Li 6795
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AUD 0.3159
Multiples of: 5

                   
2SK3541


60V 300mA 1.8@10V,300mA 1.1V@250uA 1PCSNChannel SOT-723 MOSFETs ROHS
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ElecSuper 6790
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AUD 0.0218
Multiples of: 20

                   
WPM2049B


20V 660mA 100mW 950m@1.8V,0.5A 0.35V@0.8A DFN-3L(1x0.6) MOSFETs ROHS
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TECH PUBLIC 6790
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AUD 0.0285
Multiples of: 20

                   
AGM18N10AP


100V 35A 45W 17m@10V,12A 1.6V@250uA 1PCSNChannel PDFN3x3 MOSFETs ROHS
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AGM-Semi 6790
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AUD 0.1781
Multiples of: 5

                   
ZXMN6A11GTA


MOSFET 60V N-Chnl UMOS
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Diodes Incorporated 6790
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AUD 0.381
Multiples of: 1000

4.4 A60 V120 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223ReelSi1 Channel10 V5.7 nCEnhancement  
ISZ173N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 6790
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AUD 1.6737
Multiples of: 1

48 A150 V17.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C94 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.8 nCEnhancement  
STB155N3LH6


MOSFET N-channel 30V 0.0024 Ohm, 80 A, D2PAK
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STMicroelectronics 6790
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AUD 1.7036
Multiples of: 1000

80 A30 V3 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtD2PAKReelSi1 Channel20 V80 nCEnhancementAec - Q101Stripfet
STF7N80K5


STMicroelectronics MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5
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STMicroelectronics 6790
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AUD 1.6685
Multiples of: 1000

6 A800 V1.2 Ohmsn - channel 4 V- 55 C+ 150 C25 Wthrough holeTO - 220 - 3Tubesi1 channel30 V13.4 nC  mdmesh
RS1E240BNTB


Trans MOSFET N-CH 30V 24A 8-Pin HSOP EP T/R
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ROHM 6789
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AUD 0.4121
Multiples of: 1

24 A30 V2.3 mOhmsN - Channel 1 V- 55 C+ 150 C30 WSmd/SmtHSOP - 8Tape And ReelSi1 Channel20 V70 nCEnhancement  
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