MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JMSL0302AG


DFN-5(5.1x6.1) MOSFETs ROHS
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JieJie 6111
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AUD 0.2122
Multiples of: 5

                   
PHB27NQ10T,118


Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 112A; 107W; D2PAK
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Nexperia 6102
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AUD 0.9769
Multiples of: 1

28 A100 V50 mOhmsN - Channel  - 55 C+ 175 C107 WSmd/SmtSOT - 404ReelSi1 Channel20 V Enhancement  
CEDM8001 TR


MOSFET P-Channel MOSFET 20V 100mA
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Central Semiconductor 6093
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AUD 0.3173
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100 mA20 V8 OhmsP - Channel     Smd/SmtSOT - 883LCut TapeSi      
G2305


MOSFET P Trench 20V 4.1A 1V @ 250uA 52 mΩ @ 4.1A,4.5V SOT-23 RoHS
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LGE 6091
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AUD 0.0381
Multiples of: 10

                   
BSZ0602LSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 6087
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AUD 1.0819
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           Cut Tape       
AO4407A


SOP-8 MOSFETs ROHS
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JSMSEMI 6043
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AUD 0.1306
Multiples of: 5

                   
SIR512DP-T1-RE3


MOSFETs SOT669 100V 100A N-CH MOSFET
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Vishay 6000
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AUD 1.6029
Multiples of: 1

100 A100 V4.5 mOhmsN - Channel 4 V   SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V30.5 nCEnhancement PowerPak
SSM3K7002CFU,LF(T


MOSFET N Trench 60V 170mA 2.1V @ 250uA 3.9 Ω @ 100mA,10V USM RoHS
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Toshiba 5771
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AUD 0.0518
Multiples of: 10

                   
RQ6P015SPTR


ROHM Semiconductor MOSFET
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ROHM 4406
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AUD 0.4153
Multiples of: 1

1.5 A100 V350 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6ReelSi1 Channel20 V32 nCEnhancement  
CSD13381F4


N-Channel 12 V 2.1A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
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Texas Instruments 2245
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AUD 0.1034
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7 A12 V180 mOhmsn - channel8 V850 mV- 55 C+ 150 C500 mWsmd/smtPICOSTAR - 3Reel   1.06 nC  nexfet
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