MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJM2309PSC


SOT-23-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Pingjingsemi 5938
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AUD 0.0534
Multiples of: 10

                   
ESN7414


30V 34A 23W 11m@10V,20.0A 1.5V@250uA 1PCSNChannel PDFN-8L(3x3) MOSFETs ROHS
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ElecSuper 5936
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AUD 0.1157
Multiples of: 1

                   
BSC265N10LSFGATMA1


Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
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Infineon 5933
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AUD 0.5648
Multiples of: 1

            Optimos 2      
SIDR170DP-T1-RE3


N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
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Vishay 5919
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AUD 1.84
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95 A100 V4.8 mOhmsN - Channel 1 V- 55 C+ 150 C125 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V93 nCEnhancement  
KY2312


20V 5A 16mΩ@4.5V,5A 1.25W 650mV@250uA N Channel SOT-23 MOSFETs ROHS
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Kang Yang 5917
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AUD 0.0336
Multiples of: 10

                   
SSM3K333R,LF(B


Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
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Toshiba 5912
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AUD 0.1956
Multiples of: 5

                   
RQ5C030TPTL


MOSFET PCH -20V -3A SMALL SIGNAL
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ROHM 5794
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AUD 0.3136
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3 A20 V75 mOhmsP - Channel 700 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel12 V9.3 nCEnhancement  
SP3022CNJ


30V 1 N-Channel + 1 P-Channel PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Siliup 5194
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AUD 0.0866
Multiples of: 5

                   
MCG15P10YHE3-TP


MOSFETs
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Micro Commercial Components (MCC) 4498
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AUD 0.5582
Multiples of: 1

15 A100 V95 mOhmsP - Channel 1.8 V- 55 C+ 150 C50 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V20.1 nCEnhancement  
DMN53D0LTQ-7


MOSFETs MOSFET BVDSS: 41V-60V SOT523 T&R 3K
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Diodes Incorporated 4172
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AUD 0.0558
Multiples of: 1

           Reel , Cut TapeSi      
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