MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7617DN-T1-GE3


P-Channel 30 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 11572
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AUD 0.5777
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
DMN6022SSD-13


Power Management Specialized - PMIC MOSFET BVDSS: 41V-60V
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Diodes Incorporated 6714
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AUD 0.4241
Multiples of: 1

           Cut Tape       
HL2306


30V 3.5A 1.25W 39m@10V,3A 2.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 5899
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AUD 0.0279
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HL6042


20V 4A 1.5W 43m@4.5V,4A 900mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 5897
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AUD 0.0358
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WSP6055


55V 6.8A 108mΩ@10V,3.5A 1.25W 2.5V@250uA P Channel SOP-8 MOSFETs ROHS
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Winsok 5897
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AUD 0.3379
Multiples of: 5

                   
SQ2362ES-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 5897
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AUD 0.4538
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4.3 A60 V68 mOhmsN - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V7.6 nCEnhancement TrenchFET
WNM6001-3/TR


MOSFET N Channel 60V 500mA 2V @ 250uA 2O @ 500mA,10V SOT-23 RoHS
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Will Semiconductor 5890
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AUD 0.0301
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IPD90N10S4L06ATMA1


MOSFET MOSFET
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Infineon 5890
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AUD 1.6483
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90 A100 V5.8 mOhmsN - Channel 1.1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel16 V98 nCEnhancementAec - Q101 
TM70N03D


30V 70A 9.3m TO-252-3L MOSFETs ROHS
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Tritech-MOS 5889
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AUD 0.1188
Multiples of: 5

                   
AO3400


SOT-23 MOSFETs ROHS
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PAKER Microelectronics 5820
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AUD 0.0336
Multiples of: 20

                   
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