MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP4606


MOSFET SOP8 RoHS
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Quan Li 6763
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AUD 0.2004
Multiples of: 5

                   
2N7002 H6327


MOSFET N-Channel 60V MOSFET
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Infineon 6759
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AUD 0.0454
Multiples of: 1

300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V600 pCEnhancementAec - Q101 
DMGD7N45SSD-13


MOSFET MOSFET BVDSS: 251V-500V
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Diodes Incorporated 6757
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AUD 1.1873
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         Smd/SmtSO - 8Cut TapeSi      
ECH8652-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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ON Semiconductor 6741
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AUD 0.528
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- 6 A- 12 V49 mOhmsp - channel  - 55 C+ 150 C150 mWsmd/smtECH - 8Reelsi2 channel10 V11 nC   
SVD1055SATR


SOP-8 MOSFETs ROHS
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Silan 6734
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AUD 0.3819
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AO4406A


SOP-8 MOSFETs ROHS
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TECH PUBLIC 6733
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AUD 0.1462
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IRFU9010PBF


MOSFET P-Chan 50V 5.3 Amp
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Vishay 6732
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AUD 1.004
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   P - Channel  - 55 C+ 150 C Through HoleIPAK - 3TubeSi      
PMZ950UPEYL


P-Channel 20 V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount SOT-883
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Nexperia 6731
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AUD 0.1292
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- 500 mA- 20 V1.02 OhmsP - Channel - 0.7 V- 55 C+ 150 C2700 mWSmd/SmtDFN1006 - 3ReelSi 8 V1.19 nCEnhancement  
FDS4685


Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
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ON Semiconductor 6500
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AUD 0.4033
Multiples of: 1

   P Channel               
NTR4003NT1G


MOSFET NFET 30V .56A 1500M
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ON Semiconductor 6101
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AUD 0.0433
Multiples of: 10

560 mA30 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C690 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4 V1.15 nCEnhancement  
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