MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TM4828


SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Tritech-MOS 6722
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AUD 0.1443
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DMN3016LFDE-13


Diodes Incorporated MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
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Diodes Incorporated 6722
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AUD 0.1606
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10 A30 V16 mOhmsN - Channel 1.4 V- 55 C+ 150 C2.02 WSmd/SmtU - DFN2020 - E - 6Tape And ReelSi1 Channel20 V25.1 nCEnhancement  
AP15P03Q


MOSFET P Channel 30V 30A(Tc) 2.5V @ 250uA 20mO @ 9A,10V DFN3*3 RoHS
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Quan Li 6719
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AUD 0.2677
Multiples of: 5

                   
IRFBC20PBF-BE3


MOSFET 600V N-CH
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Vishay 6717
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AUD 0.8616
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2.2 A600 V4.4 OhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V18 nCEnhancement  
TX15N10


MOSFET N Channel 100V 15A(Tc) 3V @ 250uA 100mO @ 8A,10V TO-252 RoHS
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XDS 6712
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AUD 0.1757
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SI2343CDS-TP


30V 5.8A 43m@4.5V,4A 1.4W 1.2V@250uA SOT-23-3L MOSFETs ROHS
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TECH PUBLIC 6702
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AUD 0.0446
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BSC040N08NS5ATMA1


Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8
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Infineon 6701
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AUD 1.4108
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100 A80 V5.7 mOhmsN - Channel 2.2 V- 55 C+ 150 C104 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V43 nCEnhancement Optimos
80N03F


30V 80A 3.8mΩ 2.5V N Channel DFN5x6 MOSFETs ROHS
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HL 6697
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AUD 0.1097
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IAUCN04S7N004ATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 6674
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AUD 1.973
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518 A40 V550 uOhmsN - Channel 2.6 V- 55 C+ 175 C219 WSMD/SMTTDSON - 8Reel , Cut TapeSi - 20 V , + 20 V169 nCEnhancement  
ZXMN10A07FTA


N-Channel 100 V 700mA (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 6659
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AUD 0.1997
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800 mA100 V700 mOhmsN - channel 2 V- 55 C+ 150 C806 mWSmd/smtSOT - 23ReelSi1 Channel10 V2.9 nCEnhancement  
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