MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML2502


MOSFET N Trench 20V 4.2A 1.2V @ 50uA 45 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai 13405
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AUD 0.0286
Multiples of: 20

                   
SIR512DP-T1-RE3


MOSFETs SOT669 100V 100A N-CH MOSFET
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Vishay 6497
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AUD 1.407
Multiples of: 1

100 A100 V4.5 mOhmsN - Channel 4 V   SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V30.5 nCEnhancement PowerPak
TSM900N06CH X0G


MOSFET 60V 11A Single N-Channel Power MOSFET
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Taiwan Semiconductor 5883
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AUD 0.3595
Multiples of: 3750

11 A60 V76 mOhmsN - Channel 1.2 V + 150 C25 WThrough HoleTO - 251S - 3TubeSi1 Channel10 V9.3 nCEnhancement  
SIHP18N50C-E3


N-Channel 500 V 18A (Tc) 223W (Tc) Through Hole TO-220AB
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Vishay 5881
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AUD 1.9701
Multiples of: 1

18 A500 V225 mOhmsN - Channel 5 V- 55 C+ 150 C223 WThrough HoleTO - 220TubeSi1 Channel30 V65 nCEnhancement  
SQ4050EY-T1_BE3


MOSFET N-CHANNEL 40V
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Vishay 5880
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AUD 0.7981
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19 A40 V6.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C6 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V34 nCEnhancement TrenchFET
FDMS2572


150V 27A 78W 47mO@10V,4.5A N Channel Power-56-8 MOSFETs ROHS
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ON Semiconductor 5871
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AUD 1.6746
Multiples of: 1

4.5 A150 V36 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V Enhancement Ultrafet
RSD160P05TL


P-Channel 45 V 16A (Ta) 20W (Tc) Surface Mount CPT3
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ROHM 5870
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AUD 1.2567
Multiples of: 1

16 A45 V P - Channel 3 V  20 WSmd/SmtCPT - 3ReelSi1 Channel20 V16 nC   
IPL60R225CFD7AUMA1


MOSFET LOW POWER_NEW
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Infineon 5864
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AUD 1.9992
Multiples of: 1

           Cut Tape       
KIRLML6401TRPBF


12V 4.3A 50mΩ@4.5V,4.3A 1.4W 1V@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 5862
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AUD 0.0461
Multiples of: 10

                   
IRFZ34PBF


N-Channel 60 V 30A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 4654
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AUD 1.1131
Multiples of: 1

30 A60 V50 mOhmsN - Channel 2 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V46 nCEnhancement  
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