MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot BSC0902NSATMA1


Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
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Infineon 6202
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AUD 0.5418
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            Optimos      
FDMS86255


N-Channel 150 V 10A (Ta), 45A (Tc) 2.7W (Ta), 113W (Tc) Surface Mount 8-PQFN (5x6)
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ON Semiconductor 6202
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AUD 4.0074
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45 A150 V25 mOhmsN - Channel 4 V- 55 C+ 150 C113 WSmd/SmtPOWER - 56 - 10ReelSi1 Channel 63 nC  Powertrench Power Clip
KY4435


SOP-8 MOSFETs ROHS
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Kang Yang 6193
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AUD 0.1197
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IAUT150N10S5N035ATMA1


OptiMOS-5 Power Transistor MOSFET N-Channel 100V 150A 8-Pin PG-HSOF-1 T/R
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Infineon 6188
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AUD 2.1225
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150 A100 V3.5 mOhmsN - Channel 2.2 V- 55 C+ 175 C166 WSmd/SmtHSOF - 8Cut TapeSi1 Channel10 V67 nCEnhancementAec - Q101 
PSMN1R0-100ASEJ


MOSFETs SOT8000 100V 430A
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Nexperia 6182
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AUD 7.9357
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430 A100 V1.04 mOhmsN - Channel 3.6 V- 55 C+ 175 C1.55 kWSMD/SMTSOT8000A - 12Reel , Cut TapeSi1 Channel- 20 V , + 20 V339 nCEnhancement  
ZVN3306A


N-Channel 60 V 270mA (Ta) 625mW (Ta) Through Hole TO-92
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Diodes Incorporated 6174
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AUD 0.5204
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270 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C625 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
SP40N08NK


PDFN-8L(5x6) MOSFETs ROHS
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Siliup 6174
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AUD 0.1263
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IRF6662TRPBF


MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ
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Infineon 6173
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AUD 1.8967
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8.3 A100 V17.5 mOhmsn - channel  - 40 C+ 150 C89 Wsmd/smtDirectfet - MZCut Tapesi1 channel20 V22 nCenhancement directfet
AO3400A


SOT-23-3L MOSFETs ROHS
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JSMSEMI 6169
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AUD 0.029
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SI4842BDY-T1-E3


MOSFET 30V 23A 3.5W
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Vishay 6102
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AUD 1.6732
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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel      Trenchfet
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