MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMT10H025SSS-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 6977
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AUD 0.3544
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7.4 A100 V23 mOhmsN - Channel 2 V- 55 C+ 150 C12.9 WSmd/SmtSO - 8 Si1 Channel10 V21.4 nCEnhancement  
AO3406


30V 3.5A 40mΩ@10V,3.5A 750mW N Channel SOT-23-3L MOSFETs ROHS
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Yongyutai Electronics 6975
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AUD 0.043
Multiples of: 10

                   
FDN304P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 6975
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AUD 0.0498
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SH8MA3TB1


MOSFET 30V NCH+PCH POWER
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ROHM 6971
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AUD 0.6129
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7 A , 6 A30 V28 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2.8 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V7.2 nC , 10 nCEnhancement  
IAUC45N04S6N070HATMA1


Mosfet Array 2 N-Channel (Half Bridge) 40V 45A (Tj) 41W (Tc) Surface Mount PG-TDSON-8-57
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Infineon 6971
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AUD 0.7613
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55 A40 V7 mOhmsN - Channel 3 V- 55 C+ 175 C41 WSMD/SMTTDSON - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V9 nCEnhancement OptiMOS
SI2329DS


SOT-23-3L MOSFETs ROHS
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TECH PUBLIC 6969
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AUD 0.1034
Multiples of: 5

                   
IRLHS6242TRPBF


Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
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Infineon 6848
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AUD 0.234
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22 A20 V11.7 mOhmsN - Channel 1.1 V- 55 C+ 150 C9.6 WSmd/SmtPQFN - 6ReelSi1 Channel12 V14 nCEnhancement  
2N7002DW-TP


Mosfet Array 2 N-Channel (Dual) 60V 115mA 200mW Surface Mount SOT-363
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Micro Commercial Components (MCC) 6783
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AUD 0.1205
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115 mA60 V13.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel  Enhancement  
FDN5618P


MOSFET SSOT-3 P-CH 60V
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ON Semiconductor 5689
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AUD 0.1491
Multiples of: 5

1.2 A60 V170 mOhmsP - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSSOT - 3Cut TapeSi1 Channel20 V Enhancement Powertrench
IRFU024PBF


N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 1891
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AUD 0.8413
Multiples of: 1950

   N - Channel  - 55 C+ 150 C Through HoleIPAKTube       
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