MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTGD3148NT1G


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 6000
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AUD 0.125
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AO6604


SOT-23-6 MOSFETs ROHS
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Youtai 5996
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AUD 0.0913
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BSC120N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
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Infineon 5986
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AUD 0.261
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            Optimos 3      
IRF6644TRPBF


N-Channel 100 V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
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Infineon 5986
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AUD 1.4809
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10.3 A100 V10.3 mOhmsN - Channel20 V4.8 V- 40 C+ 150 C89 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V35 nCEnhancement Directfet
ZXMS6005SGTA


MOSFET 60V N-Ch FET FET 2A 480mJ Enh
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Diodes Incorporated 5985
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AUD 0.6157
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2 A65 V250 mOhmsN - channel5 V - 40 C+ 125 C1.6 WSmd/smtSOT - 223 - 3ReelSi1 Channel5 V Enhancement Intellifet
DMN31D5L-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 5981
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AUD 0.0657
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           Cut TapeSi      
FDG6301N


MOSFET SC70-6 N-CH 25V
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ON Semiconductor 5980
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AUD 0.1541
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220 mA25 V4 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 6Cut TapeSi2 Channel8 V Enhancement  
FDT86106LZ


N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
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ON Semiconductor 5979
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AUD 0.8373
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3.2 A100 V108 mOhmsn - channel   + 150 C2.2 Wsmd/smtSOT - 223Reelsi1 channel 4.3 nC  powertrench
SIRS4400DP-T1-RE3


MOSFETs N-Channel 40 V (D-S) MOSFET PowerPAK SO-8, 0.69 mohm a. 10V, 0.96 mohm a. 4.5V
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Vishay 4678
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AUD 3.2179
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440 A40 V690 uOhmsN - Channel 2.3 V- 55 C+ 150 C240 WSMD/SMTSO - 8SReel , Cut TapeSi1 Channel- 16 V , + 20 V90 nCEnhancement  
PMCXB1000UEZ


MOSFET PMCXB1000UE/DFN1010B-6/REEL 7
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Nexperia 3015
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AUD 0.2118
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