MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCV8411DTRKG


MOSFET LS SMART FET MPW
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ON Semiconductor 6268
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AUD 1.2069
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45 A42 V29 mOhmsN - Channel 1 V- 40 C+ 150 C2.7 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 14 V , 14 V EnhancementAEC - Q101 
IRF7907TRPBF


MOSFET 2 N Channel (Dual) 30V 9.1A,11A 2.35V @ 25uA 16.4 mΩ @ 9.1A,10V SOIC-8_150mil RoHS
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Infineon 6263
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AUD 0.6963
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9.1 A , 11 A30 V17.1 mOhms , 11.5 mOhmsN - Channel 1.8 V- 55 C+ 150 C2.0 WSmd/SmtSOIC - 8ReelSi2 Channel20 V6.7 nC , 14 nC   
SQ4005EY-T1_BE3


MOSFET P-CHANNEL 12V
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Vishay 6260
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AUD 0.7615
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15 A12 V13 mOhmsP - Channel 1 V- 55 C+ 175 C6 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 8 V , + 8 V29 nCEnhancement TrenchFET
NVMJST1D4N06CLTXG


MOSFETs Single N-Channel Power MOSFET 60V, 198, 1.49 mohm on Top Cool Package
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ON Semiconductor 6258
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AUD 2.2786
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198 A60 V1.49 mOhmsN - Channel 2 V- 55 C+ 175 C113 WSMD/SMTTCPAK57Reel , Cut TapeSi1 Channel- 20 V , + 20 V92.2 nCEnhancement  
IPD530N15N3GATMA1


MOSFET MV POWER MOS
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Infineon 6255
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AUD 0.857
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21 A150 V44 mOhmsN - Channel 2 V- 55 C+ 175 C68 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V12 nCEnhancement Optimos
PSMQC280N10LS2_R2_00201


MOSFETs 100V 28m ohms Excellect low FOM MOSFET for Headlight solution
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Panjit 6249
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AUD 0.4384
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21 A100 V28 mOhmsN - Channel 2.3 V- 55 C+ 175 C29.4 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V9 nCEnhancement  
LGE2300


Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
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Luguang 6246
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AUD 0.0592
Multiples of: 20

                   
IRF4905LPBF


Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
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Infineon 6235
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AUD 1.8388
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74 A55 V20 mOhmsP - Channel    200 WThrough HoleTO - 262TubeSi1 Channel20 V120 nC   
IRLML2060TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai 6217
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AUD 0.0373
Multiples of: 10

                   
SI4401BDY(UMW)


SOP-8 MOSFETs ROHS
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Youtai 5849
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AUD 0.186
Multiples of: 5

                   
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