MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSE3099


MOSFET P Trench 30V 5A (Tc) 2V @ 250uA 65 mΩ @ 5A,10V SOT-89 (SOT-89-3) RoHS
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Winsok 9219
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AUD 0.1993
Multiples of: 5

                   
20P03


30V 20A 36mΩ 2.5V P Channel TO-252 MOSFETs ROHS
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HL 8167
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AUD 0.0695
Multiples of: 10

                   
2N7002T


SOT-523 MOSFETs ROHS
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Shikues 6615
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AUD 0.0224
Multiples of: 20

                   
IRFR024TRPBF


N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 6243
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AUD 0.7454
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
PJA3441_R1_00001


MOSFET P Trench 40V 3.1A 2.5V @ 250uA 88 mΩ @ 3.1A,10V SOT-23 RoHS
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Panjit 6232
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AUD 0.0661
Multiples of: 5

                   
Hot BSZ036NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 37W; PG-TSDSON-8
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Infineon 6231
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AUD 0.4226
Multiples of: 1

            Optimos      
FDD5N50NZTM


500V 4A 1.5O@2A,10V 62W null TO-252 MOSFETs ROHS
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ON Semiconductor 6209
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AUD 0.6501
Multiples of: 1

4 A500 V1.5 OhmsN - Channel  - 55 C+ 150 C62 WSmd/SmtD - PAK - 3ReelSi1 Channel25 V12 nCEnhancement  
FDD3N40TM


MOSFET 400V N-CH MOSFET
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ON Semiconductor 5264
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AUD 0.3858
Multiples of: 1

2 A400 V2.8 OhmsN - Channel  - 55 C+ 150 C30 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
SI2333DS-T1-GE3


Vishay Semiconductors MOSFET 12V 5.3A 1.25W 32mohm 4.5V
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Vishay 2983
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AUD 0.4119
Multiples of: 1

4.1 A- 12 V32 mOhmsP - Channel  - 55 C+ 150 C750 mWSmd/SmtSOT - 23 - 3ReelSi 8 V   Trenchfet
IPG20N06S4L26AATMA1


MOSFET N-Ch 55V 20A TDSON-8
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Infineon 0
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AUD 0.6781
Multiples of: 1

20 A55 V50 mOhmsN - Channel 1.6 V- 55 C+ 175 C51 WSmd/SmtTDSON - 8ReelSi2 Channel20 V13 nCEnhancementAec - Q101Optimos
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