MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML0100TRPBF-HXY


100V 2.8A 310mΩ@10V,1A 1W 2.5V null SOT-23 MOSFETs ROHS
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HXY MOS 7045
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AUD 0.0291
Multiples of: 20

                   
SI2333


SOT-23 MOSFETs ROHS
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PAKER Microelectronics 7042
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AUD 0.0467
Multiples of: 10

                   
YJS9435A


Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W
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Yangjie 7037
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AUD 0.1333
Multiples of: 5

            Trench Power Lv      
DMTH4007LK3-13


MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A
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Diodes Incorporated 7037
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AUD 0.5622
Multiples of: 1

70 A40 V5 mOhmsN - Channel 1 V- 55 C+ 175 C2.6 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V29.1 nCEnhancement  
BRCS80N03DP


TO-252-2 MOSFETs ROHS
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Blue Rocket 7034
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AUD 0.1296
Multiples of: 5

                   
DMP2004DWK-7


Diodes Incorporated MOSFET Dual P-Channel
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Diodes Incorporated 7027
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AUD 0.1875
Multiples of: 1

430 mA- 20 V900 mOhmsP - Channel8 V- 1 V- 65 C+ 150 C250 mWSmd/SmtSOT - 363 - 6Reel    Enhancement  
CJ2306


MOSFET N Trench 30V 3.16A 3V @ 250uA 47 mΩ @ 3.5A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 7022
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AUD 0.0359
Multiples of: 20

                   
DMN10H700S-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 6896
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AUD 0.0995
Multiples of: 1

700 mA100 V700 mOhmsN - Channel 2 V- 55 C+ 150 C0.5 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.6 nCEnhancement  
STN3NF06L


Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223
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STMicroelectronics 6823
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AUD 0.2586
Multiples of: 5

   N Channel               
IRFH8325TRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC
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Infineon 2528
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AUD 0.3271
Multiples of: 1

82 A30 V7.2 mOhmsN - Channel 1.8 V- 55 C+ 150 C54 WSmd/SmtPQFN - 8ReelSi1 Channel20 V32 nC   
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