MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN10H700S-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 6346
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AUD 0.0936
Multiples of: 1

700 mA100 V700 mOhmsN - Channel 2 V- 55 C+ 150 C0.5 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.6 nCEnhancement  
CDN1308EDL


Transistor: N-MOSFET; unipolar; 30V; 1.1A; Idm: 6A; 0.3W; SOT323
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CDIL 6329
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AUD 0.0822
Multiples of: 25

                   
3LN01SS-TL-E


ON Semiconductor MOSFET
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ON Semiconductor 6323
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AUD 0.1231
Multiples of: 1

150 mA30 V3.7 OhmsN - Channel     Smd/SmtSSFP - 3ReelSi1 Channel     
ZXM62P02E6TA


P-Channel 20 V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 6318
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AUD 0.4679
Multiples of: 1

2.3 A20 V200 mOhmsP - channel 700 mV- 55 C+ 150 C1.1 WSmd/smtSOT - 23 - 6ReelSi1 Channel- 4.5 V Enhancement  
IPD042P03L3GATMA1


MOSFET SMALL SIGNALP-CH
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Infineon 6289
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AUD 1.0409
Multiples of: 1

70 A30 V6.8 mOhmsP - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 4.5 V131 nCEnhancement  
IRFR220NTRPBF


MOSFET N Trench 200V 5A 4V @ 250uA 600 mΩ @ 2.9A,10V TO-252-2 (DPAK) RoHS
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Infineon 6251
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AUD 0.2601
Multiples of: 5

5 A200 V600 mOhmsN - Channel  - 55 C+ 175 C43 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
RS1G201ATTB1


P-Channel 40V 20A (Ta), 78A (Tc) 3W (Ta), 40W (Tc) Surface Mount 8-HSOP
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ROHM 6220
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AUD 1.8881
Multiples of: 1

          8 - PowertdfnDigi - Reel®Mosfet (Metal Oxide)      
STW45NM50


Transistor: N-MOSFET; unipolar; 500V; 28.4A; 390W; TO247
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STMicroelectronics 6047
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AUD 9.5709
Multiples of: 1

   N Channel               
Hot IRF5305PBF


MOSFET P Trench 55V 31A 4V @ 250uA 60 mΩ @ 16A,10V TO-220 (TO-220-3) RoHS
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Infineon 6016
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AUD 0.5587
Multiples of: 1

   P - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
IPT025N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 4972
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AUD 7.3224
Multiples of: 1

263 A150 V2.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C395 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V105 nCEnhancement  
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