MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
4805


SOP-8 MOSFETs ROHS
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HL 6348
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AUD 0.1011
Multiples of: 5

                   
IPTC068N20NM6ATMA1


MOSFETs OptiMOS 6 Power-Transistor, 200 V
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Infineon 6341
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AUD 6.16
Multiples of: 1

140 A200 V6.8 mOhmsN - Channel 4.5 V- 55 C+ 175 C319 WSMD/SMT Reel , Cut TapeSi1 Channel20 V71 nCEnhancement OptiMOS
BSC084P03NS3GATMA1


Transistor: P-MOSFET; unipolar; -30V; -78.6A; 69W; PG-TDSON-8
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Infineon 6338
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AUD 0.6427
Multiples of: 1

            Optimos P3      
PMF250XNEX


MOSFET PMF250XNE/SC-70/REEL 7" Q1/T1
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Nexperia 6333
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AUD 0.1672
Multiples of: 1

1 A30 V254 mOhmsN - Channel 750 mV- 55 C+ 150 C342 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel4.5 V1.05 nCEnhancement  
NCE15P25JK


TO-252 MOSFETs ROHS
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NCE Power 6330
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AUD 0.7582
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ZVN4206AV


MOSFET Avalanche
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Diodes Incorporated 6327
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AUD 0.4787
Multiples of: 1

600 mA60 V1 OhmsN - Channel 1.3 V- 55 C+ 150 C700 mWThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
SIR122LDP-T1-RE3


MOSFETs N-CHANNEL 80-V (D-S)
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Vishay 6324
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AUD 0.869
Multiples of: 1

62.3 A80 V7.35 mOhmsN - Channel 2.5 V- 55 C+ 150 C SMD/SMTSO - 8 Si1 Channel- 20 V , + 20 V34.6 nCEnhancement  
FDV304P(UMW)


SOT-23 MOSFETs ROHS
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Youtai 6295
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AUD 0.0371
Multiples of: 10

                   
IRF830PBF


N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 6194
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AUD 0.8997
Multiples of: 1

4.5 A500 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V38 nCEnhancement  
25N06


TO-252-2 MOSFETs ROHS
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TECH PUBLIC 4146
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AUD 0.1479
Multiples of: 5

                   
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