MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3J334R,LF


Toshiba MOSFET P-Ch U-MOSVI FET ID -4A -30VDSS 280pF
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Toshiba 7126
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AUD 0.1063
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- 4 A- 30 V136 mOhmsP - Channel - 2 V- 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V5.9 nCEnhancement  
US6M1TR


ROHM Semiconductor MOSFET NP 30 20V 1A
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ROHM 7120
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AUD 0.3719
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1.4 A30 V170 mOhmsN - Channel, P - Channel20 V - 55 C+ 150 C1 WSmd/SmtTUMT - 6ReelSi2 Channel20 V1.4 nC , 2.1 nCEnhancement  
TSM1NB60CP ROG


MOSFET 600V 1A Single N-Cha nnel Power MOSFET
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Taiwan Semiconductor 7119
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AUD 0.4075
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1 A600 V8 OhmsN - Channel 2.5 V- 55 C+ 150 C39 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V6.1 nCEnhancement  
IRFU9220PBF


P-Channel 200 V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 7116
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AUD 1.6413
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   P - Channel  - 55 C+ 150 C Through HoleIPAKTubeSi      
AP30H100KA


MOSFET N Channel 30V 100A(Tc) 3V @ 250uA 4.2mO @ 40A,10V TO-252 RoHS
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Quan Li 7113
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AUD 0.2897
Multiples of: 5

                   
IAUCN04S7N012ATMA1


MOSFETs N
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Infineon 7105
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AUD 1.1797
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214 A40 V1.2 mOhmsN - Channel 2.6 V- 55 C+ 175 C105 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V42 nCEnhancement  
ZXMN6A07ZTA


Trans MOSFET N-CH 60V 2.5A 4-Pin(3+Tab) SOT-89 T/R
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Diodes Incorporated 7093
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AUD 0.3806
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2.5 A60 V250 mOhmsN - Channel 1 V  2.6 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel10 V3.2 nCEnhancement  
SI7119DN-T1-GE3


MOSFET 200V 3.8A 52W 1.05ohm @ 10V
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Vishay 7084
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AUD 0.657
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   P - Channel  - 50 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
DMN1029UFDB-7


MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC
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Diodes Incorporated 7075
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AUD 0.1711
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5.6 A12 V29 mOhmsN - Channel 400 mV- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - B - 6Cut TapeSi2 Channel4.5 V10.5 nCEnhancement  
RFD14N05LSM


Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; TO252AA
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ON Semiconductor 3321
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AUD 0.745
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