MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3401A


30V 4.2A 65mΩ@10V,4.2A 350mW 30V@250uA P Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 6285
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AUD 0.0294
Multiples of: 20

                   
RW4C045BCTCL1


MOSFET MOSFET
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ROHM 6274
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AUD 0.5615
Multiples of: 1

4.5 A20 V56 mOhmsP - Channel 1.5 V + 150 C1.5 WSMD/SMTDFN1616 - 7TReel , Cut TapeSi1 Channel- 8 V , + 8 V6.5 nCEnhancement  
DMG1012UWQ-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated 6272
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AUD 0.0821
Multiples of: 1

950 mA25 V450 mOhmsN - Channel 1 V- 55 C+ 150 C460 mWSMD/SMT Reel , Cut TapeSi1 Channel- 6 V , + 6 V1 nCEnhancement  
BUK7Y3R5-40HX


MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:115W; Transistor Case Style:SOT-669; No. of Pins:4Pins; Operating Temperature Max:175C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
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Nexperia 6272
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AUD 0.5189
Multiples of: 1

   N Channel               
IRFR1010ZTRPBF


Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
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Infineon 6272
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AUD 0.9687
Multiples of: 1

91 A55 V7.5 mOhmsN - Channel    140 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V63 nC   
IPB180P04P403ATMA2


P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3
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Infineon 6272
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AUD 3.2908
Multiples of: 1

          TO - 263 - 7 , D²PAK (6 Leads + Tab)Digi - Reel®Mosfet (Metal Oxide)      
SQ4005EY-T1_BE3


MOSFET P-CHANNEL 12V
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Vishay 6260
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AUD 0.7615
Multiples of: 1

15 A12 V13 mOhmsP - Channel 1 V- 55 C+ 175 C6 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 8 V , + 8 V29 nCEnhancement TrenchFET
FDB047N10


MOSFET 100V N-Channel PowerTrench
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ON Semiconductor 6238
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AUD 3.3164
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtD2PAKReel       
IQE046N08LM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 3704
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AUD 1.806
Multiples of: 1

99 A80 V4.6 mOhmsN - Channel 2.3 V- 55 C+ 175 C100 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V38 nCEnhancement  
KND3308A


MOSFET N Trench 80V 80A (Tc) 4V @ 250uA 9 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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KIA 1763
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AUD 0.382
Multiples of: 1

                   
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