MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RZF013P01TL


ROHM Semiconductor MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 6364
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AUD 0.151
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1.3 A12 V260 mOhmsP - Channel 300 mV- 55 C+ 150 C0.8 WSmd/SmtTUMT - 3ReelSi1 Channel- 4.5 V2.4 nCEnhancement  
RSQ035N03HZGTR


MOSFET NCH 30V 3.5A SMALL SIGNAL MOSF
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ROHM 6356
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AUD 0.3892
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3.5 A30 V62 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel20 V5.3 nCEnhancementAec - Q101 
SI2324A-TP


MOSFET N-Ch Enh FET 100Vds 2A 8A 20Vgs 22pF
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Micro Commercial Components (MCC) 6353
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AUD 0.1034
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2 A100 V280 mOhmsN - Channel 10 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.8 nCEnhancement  
HSS6107


MOSFET P Channel 60V 1.7A 2.5V @ 250uA 180mO @ 1.5A,10V SOT-23-3L RoHS
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HUASHUO 6352
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AUD 0.0785
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IRF8734TRPBF


MOSFET N Trench 30V 21A 2.35V @ 50uA 3.5 mΩ @ 21A,10V SOIC-8_150mil RoHS
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Infineon 6351
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AUD 0.5122
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            Hexfet®      
IRF9Z34NPBF


60V 20A 20W 87mΩ@10V,20A 1.7V@250uA P Channel TO-220 MOSFETs ROHS
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JSMSEMI 6348
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AUD 0.3262
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DN3535N8-G


Transistor: N-MOSFET; unipolar; 350V; 0.2A; 1.6W; SOT89-3
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Microchip 6304
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AUD 1.054
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230 mA350 V10 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Depletion  
ZXMP10A13FTA


MOSFET P-Ch 100 Volt 0.7A
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Diodes Incorporated 5897
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AUD 0.2122
Multiples of: 5

700 mA100 V1 OhmsP - Channel 2 V- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3.5 nCEnhancement  
SIRA06DDP-T1-UE3


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 5824
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AUD 0.417
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125 A30 V2.2 mOhmsN - Channel 2.2 V- 55 C+ 150 C59 WSMD/SMTSO - 8 Si1 Channel- 16 V , + 20 V31 nCEnhancement  
IPD70N10S3L-12


Infineon Technologies MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
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Infineon 5795
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AUD 1.6418
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70 A100 V11.5 mOhmsN - Channel  - 55 C+ 175 C125 WSmd/SmtDPAK - 3ReelSi1 Channel16 V59 nCEnhancementAec - Q101Optimos
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