MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2KJ7110DFN


MOSFET DFN1006-3 RoHS
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KEXIN 6392
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AUD 0.0347
Multiples of: 10

                   
DMP2240UDM-7


Mosfet Array 2 P-Channel (Dual) 20V 2A 600mW Surface Mount SOT-26
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Diodes Incorporated 6387
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AUD 0.1916
Multiples of: 5

2 A20 V150 mOhmsP - Channel 450 mV- 65 C+ 150 C600 mWSmd/SmtSOT - 26 - 6Cut TapeSi2 Channel4.5 V Enhancement  
AOSS62934


Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23
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Alpha & Omega 6384
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AUD 0.1191
Multiples of: 1

            AlphaSGT      
AO3481-HXY


30V 4.2A 45m 1PCSPChannel SOT-23-3L MOSFETs ROHS
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HXY MOS 6382
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AUD 0.0391
Multiples of: 20

                   
IXTA120P065T


MOSFET -120 Amps -65V 0.01 Rds
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IXYS 6382
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AUD 6.6493
Multiples of: 1

120 A65 V10 mOhmsP - Channel 2 V- 55 C+ 150 C298 WSmd/SmtTO - 263AA - 3TubeSi1 Channel10 V185 nCEnhancement  
DMT6010LSS-13


MOSFET 60V N-Ch Enh FET 12mOhm 4.5Vgs 11.5A
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Diodes Incorporated 6380
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AUD 0.8863
Multiples of: 1

14 A60 V8 mOhmsN - Channel 800 mV- 55 C+ 150 C2 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V41.3 nCEnhancement  
SI6562CDQ-T1-BE3


MOSFETs TSSOP8 NPCH 20V 5.7A
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Vishay 6378
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AUD 0.6239
Multiples of: 1

6.7 A , 6.1 A20 V2 Ohms , 6 OhmsN - Channel, P - Channel 600 mV- 55 C+ 150 C1.6 W , 1.7 WSMD/SMTTSSOP - 8BulkSi2 Channel- 12 V , 12 V15 nC , 34 nCEnhancement  
IPN80R2K0P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 1.9A; 6.4W; PG-SOT223
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Infineon 6375
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AUD 0.4477
Multiples of: 1

            Coolmos P7      
HT8KC5TB1


MOSFETs 60V 10A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC5 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 6374
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AUD 0.6757
Multiples of: 1

10 A60 V90 mOhmsN - Channel 2.5 V- 55 C+ 150 C13 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.1 nCEnhancement  
TM03N06MI


SOT-23-3L MOSFETs ROHS
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Tritech-MOS 6363
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AUD 0.029
Multiples of: 20

                   
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