MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQP6N90C


Transistor: N-MOSFET; unipolar; 900V; 3.8A; 167W; TO220AB
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ON Semiconductor 6413
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AUD 1.6054
Multiples of: 1

            Qfet®      
IRF7493TRPBF


MOSFET N Trench 80V 9.3A 4V @ 250uA 15 mΩ @ 5.6A,10V SOIC-8_150mil RoHS
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Infineon 6412
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AUD 0.7
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9.2 A80 V15 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V31 nC   
2N7002KW


MOSFET NCHAN Enhance MOSFET
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ON Semiconductor 6406
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AUD 0.0711
Multiples of: 5

310 mA60 V3 OhmsN - Channel    300 mWSmd/SmtSOT - 323ReelSi1 Channel  Enhancement  
AON7264E-HXY


60V 40A 15mΩ@10V,20A 2.5V null DFN3x3-8L MOSFETs ROHS
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HXY MOS 6406
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AUD 0.1934
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KY2004KNC


DFN-3L(1x0.6) MOSFETs ROHS
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Kang Yang 6402
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AUD 0.0252
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BUK7219-55A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 6402
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AUD 2.3787
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55 A55 V19 mOhmsN - Channel20 V - 55 C+ 175 C114 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement  
BSS123N H6433


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 6397
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AUD 0.069
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190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V900 pCEnhancement  
NX3020NAKW.115


Transistor: N-MOSFET; unipolar; 30V; 0.11A; 300mW; SOT323
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Nexperia 6397
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AUD 0.1024
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IRFP254PBF


N-Channel 250 V 23A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 6396
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AUD 3.0537
Multiples of: 1

23 A250 V140 mOhmsN - Channel 2 V- 55 C+ 150 C190 WThrough HoleTO - 247ACTubeSi1 Channel10 V140 nCEnhancement  
TDM3536


MOSFET N Trench 30V 70A (Tc) 2.5V @ 250uA 4.2 mΩ @ 12A,10V PPAK-8_3x3mm RoHS
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Techcode 4622
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AUD 0.295
Multiples of: 5

                   
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