MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM300NB06DCR RLG


MOSFET Dual N-Chan Pwr MOSFET 60V 25A 30mu
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Taiwan Semiconductor 7275
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AUD 0.7033
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IPD60R380P6ATMA1


MOSFET N-Ch 600V 10.6A DPAK-2
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Infineon 7275
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AUD 0.7571
Multiples of: 2500

 600 V N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel    Coolmos
NVD6416ANLT4G-VF01


MOSFET NFET DPAK 100V 19A 81MOHM
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ON Semiconductor 7275
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AUD 0.8542
Multiples of: 2500

         Smd/SmtTO - 252 - 3ReelSi    Aec - Q100 
SI4100DY-T1-GE3


MOSFET 100V 6.8A 6.0W 63mohm @ 10V
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Vishay 7275
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AUD 0.9821
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
STD46P4LLF6


Transistor: P-MOSFET; unipolar; -40V; -32.5A; 70W; DPAK
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STMicroelectronics 7275
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AUD 1.0355
Multiples of: 2500

                   
NTMS10P02R2G


P-Channel 20 V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
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ON Semiconductor 7275
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AUD 1.08
Multiples of: 2500

8.8 A20 V20 mOhmsp - channel 600 mV- 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel- 2.5 V48 nCenhancement  
STD6N60M2


MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh II
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STMicroelectronics 7275
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AUD 1.1548
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4.5 A600 V1.06 Ohmsn - channel25 V3 V- 55 C+ 150 C60 Wsmd/smtDPAK - 2Reelsi1 channel25 V8 nC  mdmesh
TSM60NC620CP ROG


MOSFETs 600V, 7A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 7275
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AUD 1.1854
Multiples of: 1

7 A600 V620 mOhmsN - Channel 5 V- 55 C+ 150 C78 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
STD120N4LF6


MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep
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STMicroelectronics 7275
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AUD 1.5331
Multiples of: 2500

80 A40 V3.6 mOhmsn - channel 3 V- 55 C+ 150 C110 Wsmd/smtDPAKReelsi1 channel20 V80 nC aec - q101stripfet
SI4896DY-T1-GE3


Vishay Semiconductors MOSFET 80V 9.5A 3.1W 16.5mohm 10V
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Vishay 7275
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AUD 1.7857
Multiples of: 2500

9.5 A80 V16.5 mOhmsN - Channel20 V2 V- 55 C+ 150 C3.1 WSmd/SmtSO - 8ReelSi  34 nC  Trenchfet
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