MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7000BU


MOSFET 60V N-Channel Sm Sig
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ON Semiconductor 6790
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AUD 0.1226
Multiples of: 250

   N - Channel  - 55 C+ 150 C Through HoleTO - 92Bulk       
FQN1N60CTA


MOSFET 600V NCH MOSFET
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ON Semiconductor 6790
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AUD 0.3185
Multiples of: 1

300 mA600 V9.3 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92Ammo PackSi1 Channel30 V Enhancement  
NCV8406ASTT1G


ON Semiconductor Gate Drivers 65V, SMARTFET
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ON Semiconductor 6790
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AUD 0.8517
Multiples of: 500

      - 40 C+ 150 C1.25 WSmd/SmtSOT - 223 - 4ReelSi    Aec - Q100 
IPB090N06N3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
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Infineon 6790
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AUD 0.8892
Multiples of: 1000

            Optimos 3      
STF7N80K5


STMicroelectronics MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5
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STMicroelectronics 6790
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AUD 1.5285
Multiples of: 1000

6 A800 V1.2 Ohmsn - channel 4 V- 55 C+ 150 C25 Wthrough holeTO - 220 - 3Tubesi1 channel30 V13.4 nC  mdmesh
STB155N3LH6


MOSFET N-channel 30V 0.0024 Ohm, 80 A, D2PAK
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STMicroelectronics 6790
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AUD 1.5756
Multiples of: 1000

80 A30 V3 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtD2PAKReelSi1 Channel20 V80 nCEnhancementAec - Q101Stripfet
ISZ173N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 6790
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AUD 1.6737
Multiples of: 1

48 A150 V17.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C94 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.8 nCEnhancement  
STB25N80K5


STMicroelectronics MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5
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STMicroelectronics 6790
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AUD 3.9813
Multiples of: 1000

19.5 A800 V260 mOhmsn - channel 4 V- 55 C+ 150 C250 Wsmd/smtD2PAK - 3Reelsi1 channel30 V40 nCenhancement mdmesh
RS1E240BNTB


Trans MOSFET N-CH 30V 24A 8-Pin HSOP EP T/R
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ROHM 6789
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AUD 0.3875
Multiples of: 1

24 A30 V2.3 mOhmsN - Channel 1 V- 55 C+ 150 C30 WSmd/SmtHSOP - 8Tape And ReelSi1 Channel20 V70 nCEnhancement  
TM9928


SOP-8 MOSFETs ROHS
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Tritech-MOS 6785
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AUD 0.1142
Multiples of: 5

                   
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