MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SL2302S


MOSFET N Channel 20V 2.6A 1.5V @ 250uA 85mO @ 2.6A,4.5V SOT-23 RoHS
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SLKORMICRO 9166
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AUD 0.0151
Multiples of: 50

                   
AO3402-HXY


30V 5A 42mΩ@10V 1.2V null SOT-23 MOSFETs ROHS
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HXY MOS 6654
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AUD 0.0262
Multiples of: 20

                   
BSP135 H6327


Infineon Technologies MOSFET N-Ch 600V 120mA SOT-223-3
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Infineon 6652
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AUD 0.6879
Multiples of: 1

20 mA600 V60 OhmsN - Channel - 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V3.7 nCDepletion  
DMNH4026SSD-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 6643
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AUD 0.6182
Multiples of: 1

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ISZ520N20NM6ATMA1


MOSFETs N
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Infineon 6642
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AUD 1.3279
Multiples of: 1

26 A200 V52 mOhmsN - Channel 3.7 V- 55 C+ 175 C88 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.9 nCEnhancement  
DMG3401LSN-7


MOSFET 30V P-CH MOSFET
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Diodes Incorporated 6629
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AUD 0.1429
Multiples of: 5

3 A30 V85 mOhmsP - Channel12 V- 1.3 V- 55 C+ 150 C0.8 WSmd/SmtSC59 - 3ReelSi1 Channel- 10 V11.6 nCEnhancement  
SIR5812DP-T1-RE3


MOSFETs PPAKSO8 N-CH 80V 13A
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Vishay 6628
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AUD 0.5343
Multiples of: 1

45.3 A80 V13.5 mOhmsN - Channel 4 V- 55 C+ 150 C50 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V10 nCEnhancement  
R6002JND4TL1


MOSFETs 600V 1A SOT-223-3, PrestoMOS with integrated high-speed diode: R6002JND4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS series, R60xxJNx series increases design flexibility while maintaining
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ROHM 6627
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AUD 0.4871
Multiples of: 1

1 A600 V3.25 OhmsN - Channel 7 V- 55 C+ 150 C6.6 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V7 nCEnhancement  
NVMFD5C650NLET1G


MOSFETs T6 60V LL S08FL DS
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ON Semiconductor 6624
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AUD 1.3907
Multiples of: 1

111 A60 V4.2 mOhmsN - Channel 2.2 V- 55 C+ 175 C125 WSMD/SMTDFN - 8Reel , Cut TapeSi2 Channel20 V37 nCEnhancement  
CSD18540Q5B


Texas Instruments MOSFET 60V, N-channel NexFET Pwr MOSFET
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Texas Instruments 2268
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AUD 1.842
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221 A60 V3.3 mOhmsN - Channel+/- 20 V1.5 V- 55 C+ 150 C195 WSmd/SmtVSON - CLIP - 8ReelSi1 Channel10 V41 nCEnhancement Nexfet
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