MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
4614


40V 1PCSNChannel+1PCSPChannel SOP-8 MOSFETs ROHS
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HL 6678
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AUD 0.0872
Multiples of: 5

                   
FDMC86240


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 6670
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AUD 1.9929
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16 A150 V51 mOhmsN - Channel 2.9 V- 55 C+ 150 C40 WSmd/SmtPOWER 33ReelSi1 Channel20 V6 nC  Powertrench
BUK9Y21-40E,115


MOSFET N-channel 40 V 21 mo FET
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Nexperia 6662
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AUD 0.3457
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33 A40 V18.1 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C45 WSmd/SmtLFPAK - 4Reel   7 nCEnhancement  
PH2925U,115


NXP Semiconductors MOSFET
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Nexperia 6657
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AUD 0.7878
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100 A25 V3 mOhmsN - Channel  - 55 C+ 150 C62.5 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V Enhancement  
RD3H200SNTL1


MOSFET Nch 45V 20A TO-252 (DPAK)
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ROHM 6655
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AUD 0.9601
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20 A45 V28 mOhmsN - Channel 1 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V12 nCEnhancement  
NCEP6090AGU


PDFN-8(5.2x6.2) MOSFETs ROHS
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NCE Power 6655
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AUD 0.6833
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YJH03N10A


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
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Yangjie 6654
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AUD 0.142
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            Trench Power Mv      
SIR578DP-T1-RE3


MOSFETs SOT669 150V 70.2A N-CH MOSFET
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Vishay 6637
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AUD 2.0114
Multiples of: 1

70.2 A150 V8.8 mOhmsN - Channel 4 V- 55 C+ 150 C SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V24.5 nCEnhancement  
IPD90P03P4L


TO-252 MOSFETs ROHS
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TECH PUBLIC 6629
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AUD 0.328
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IRF510PBF


N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 4801
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AUD 0.5452
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5.6 A100 V540 mOhmsN - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V8.3 nCEnhancement  
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