MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2300


MOSFET SOT23 RoHS
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TWGMC 17886
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AUD 0.032
Multiples of: 20

                   
NVMFS5C628NT1G


MOSFET T6 60V SG
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ON Semiconductor 6617
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AUD 2.397
Multiples of: 1

150 A60 V3 mOhmsN - Channel 4 V- 55 C+ 175 C110 WSMD/SMTSO - 8FL - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V34 nCEnhancementAEC - Q100 
FDD86540


MOSFET 60V 50A 4.1ohm NCh PowerTrench MOSFET
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ON Semiconductor 6616
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AUD 0.8946
Multiples of: 1

21.5 A60 V5 mOhmsN - Channel  - 55 C+ 150 C127 WSmd/SmtD - PAKReelSi1 Channel    Powertrench
BSC097N06NS-HXY


60V 65A 89W 8m@10V,20A 2.5V@250uA 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 6610
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AUD 0.3806
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AUIRF2807


International Rectifier MOSFET AUTO 75V 1 N-CH HEXFET 13mOhms
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Infineon 6605
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AUD 2.4021
Multiples of: 1

75 A75 V13 mOhmsN - Channel  - 55 C 230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V106.7 nCEnhancementAec - Q101 
IPP65R150CFDXKSA1


Infineon Technologies MOSFET N-Ch 700V 22.4A TO220-3
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Infineon 6602
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AUD 3.9509
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22.4 A700 V150 mOhmsN - Channel 3.5 V- 55 C+ 150 C195.3 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V86 nCEnhancement Coolmos
FDS6898A


Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
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ON Semiconductor 6596
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AUD 0.7554
Multiples of: 1

   Dual N Channel               
2SK3019


null 100mA 2.5@4.5V,100mA 150mW 1V@250uA SOT-523 MOSFETs ROHS
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Siliup 6596
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AUD 0.0122
Multiples of: 50

                   
SH8MA3TB1


MOSFET 30V NCH+PCH POWER
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ROHM 6570
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AUD 0.6073
Multiples of: 1

7 A , 6 A30 V28 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2.8 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V7.2 nC , 10 nCEnhancement  
SSM10N954L,EFF(S


TCSPAC-153001 MOSFETs ROHS
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Toshiba 5629
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AUD 0.132
Multiples of: 1

                   
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