MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STN3NF06L


Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223
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STMicroelectronics 6770
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AUD 0.2829
Multiples of: 5

   N Channel               
NTF2955T1G


P-Channel 60 V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
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ON Semiconductor 6701
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AUD 0.4896
Multiples of: 1

- 2.6 A- 60 V145 mOhmsP - Channel20 V - 55 C+ 175 C2.3 WSmd/SmtSOT - 223 - 3Reel    Enhancement  
BSS138


MOSFET N Trench 50V 220mA 1.5V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Blue Rocket 6673
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AUD 0.0204
Multiples of: 5

                   
BSC047N08NS3 G


Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
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Infineon 6665
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AUD 2.3687
Multiples of: 1

18 A80 V4.7 mOhmsN - Channel20 V2 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V69 nCEnhancement Optimos
BSC050N04LSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
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Infineon 6652
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AUD 0.4072
Multiples of: 1

            Optimos 3      
FCD5N60TM


Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
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ON Semiconductor 6646
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AUD 1.3282
Multiples of: 1

            Superfet®      
RZM002P02T2L


MOSFET TRANS MOSFET P-CH 20V 0.2A TR
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ROHM 6644
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AUD 0.058
Multiples of: 10

200 mA20 V1.2 OhmsP - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel- 4.5 V1.4 nCEnhancement  
FDB110N15A


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 6642
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AUD 3.9403
Multiples of: 1

92 A150 V9.25 mOhmsN - Channel 4 V  234 WSmd/SmtD2PAKReelSi1 Channel20 V47 nC  Powertrench
FQD30N06TM


MOSFET 60V 22.7A N-CHANNEL QFET MOSFET
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ON Semiconductor 6635
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AUD 0.7815
Multiples of: 1

22.7 A60 V45 mOhmsN - Channel25 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 2ReelSi1 Channel25 V Enhancement  
SI2301


MOSFET P Trench 20V 2.3A 450mV @ 250uA（Min） 130 mΩ @ 2.3A,4.5V SOT23 RoHS
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PUOLOP 6169
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AUD 0.0191
Multiples of: 20

                   
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