MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3042L-7


MOSFET 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A
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Diodes Incorporated 114266
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AUD 0.1231
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5.8 A30 V26.5 mOhmsN - Channel 600 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V13.3 nCEnhancement  
TX15N10


MOSFET N Channel 100V 15A(Tc) 3V @ 250uA 100mO @ 8A,10V TO-252 RoHS
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XDS 6712
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AUD 0.1757
Multiples of: 5

                   
PMZ370UNEYL


N-Channel 30 V 900mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount SOT-883
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Nexperia 6711
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AUD 0.1363
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900 mA30 V370 mOhmsn - channel 770 mV- 55 C+ 150 C360 mWsmd/smtDFN1006 - 3Reel-1 channel+/- 8 V0.77 nCenhancement  
SI2343CDS-TP


30V 5.8A 43m@4.5V,4A 1.4W 1.2V@250uA SOT-23-3L MOSFETs ROHS
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TECH PUBLIC 6702
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AUD 0.0446
Multiples of: 10

                   
IXTY08N100D2


MOSFET 8mAmps 1000V
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IXYS 6699
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AUD 3.0537
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800 mA1 kV21 Ohmsn - channel 2 V- 55 C+ 150 C60 Wsmd/smtTO - 252 - 3Tubesi1 channel20 V14.6 nCdepletion  
NVTFS6H880NLWFTAG


MOSFET T8 80V LL U8FL
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ON Semiconductor 6679
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AUD 0.486
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22 A80 V29 mOhmsN - Channel 2 V- 55 C+ 175 C33 WSMD/SMT Cut Tape , ReelSi1 Channel- 20 V , + 20 V9 nCEnhancement  
IAUC100N04S6L014ATMA1


MOSFET MOSFET_20V 40V
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Infineon 6666
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AUD 0.7996
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           Cut Tape       
NTR4503NT1G


ON Semiconductor MOSFET 30V 2.5A N-Channel
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ON Semiconductor 6649
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AUD 0.0971
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2.5 A30 V105 mOhmsN - Channel20 V - 55 C+ 150 C730 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
80N03F


30V 80A 3.8mΩ 2.5V N Channel DFN5x6 MOSFETs ROHS
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HL 4869
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AUD 0.0955
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ZXMN6A08GTA


N-Channel 60 V 3.8A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 663
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AUD 0.4252
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5.3 A60 V80 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V5.8 nCEnhancement  
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