MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN1004UFDF-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 7304
Ships to you
between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.2637

Multiples of: 1

15 A12 V4.1 mOhmsN - Channel 300 mV- 55 C+ 150 C2.1 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel8 V47 nCEnhancement  
KPD7910A


100V 28A 102W 60m@10V,10A 2V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

KIA 7299
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.1813

Multiples of: 5

                   
RQ5E025ATTCL


MOSFET Pch -30V -2.5A Si MOSFET
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ROHM 7297
Ships to you
between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.1903

Multiples of: 1

2.5 A30 V70 mOhmsP - Channel 2.5 V + 150 C1 WSmd/SmtSOT - 346 - 3Cut TapeSi1 Channel20 V5.4 nCEnhancement  
SP60N30TH


TO-252 MOSFETs ROHS
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Siliup 7296
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0827

Multiples of: 5

                   
2N7002KW-AU_R1_000A1


MOSFET 60V N-Channel Enhancement Mode MOSFET - ESD Protected
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Panjit 7292
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.0419

Multiples of: 1

250 mA60 V4 OhmsN - Channel 2.5 V- 55 C+ 150 C350 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V800 pCEnhancementAEC - Q101 
NTJD4152PT2G


MOSFET PFET SC88 20V 88MA 2
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ON Semiconductor 7288
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.11

Multiples of: 1

880 mA20 V1 OhmsP - Channel 450 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel- 1.8 V2.2 nCEnhancement  
IPD025N06NATMA1


MOSFET MV POWER MOS
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Infineon 7286
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.6256

Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtTO - 252 - 3Reel      Optimos
DMN13H750S-7


Diodes Incorporated MOSFET N-Ch Enh Mode FET 130Vdss 20Vgss
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Diodes Incorporated 7275
Ships to you
between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.2044

Multiples of: 5

1 A130 V410 mOhmsN - Channel 2 V- 55 C+ 150 C1.26 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V5.6 nCEnhancement  
IRF830PBF


N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 7273
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.0092

Multiples of: 1

4.5 A500 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V38 nCEnhancement  
DMG2305UX-13


MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
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Diodes Incorporated 6925
Ships to you
between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0596

Multiples of: 10

- 4.2 A- 20 V52 mOhmsP - Channel8 V- 0.9 V- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Reel   10.2 nCEnhancement  
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