MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2312CDS-T1-GE3


MOSFET 20V Vds 8V Vgs SOT-23
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Vishay 7488
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AUD 0.1669
Multiples of: 5

6 A20 V31.8 mOhmsN - Channel 450 mV- 55 C+ 150 C2.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V18 nCEnhancement Trenchfet
TSM2309CX RFG


MOSFET -60V, -3.1A, Single P-Channel Power MOSFET
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Taiwan Semiconductor 7352
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AUD 0.1547
Multiples of: 5

3.1 A60 V160 mOhmsP - Channel 1.2 V + 50 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V8.2 nCEnhancement  
NTA4153NT3G


MOSFET NFET SC75 20V 915MA
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ON Semiconductor 7338
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AUD 0.143
Multiples of: 1

915 mA20 V230 mOhmsN - Channel 450 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 416 - 3Cut TapeSi1 Channel4.5 V1.82 nCEnhancement  
20N02


20V 20A 12mΩ 1V N Channel TO-252 MOSFETs ROHS
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HL 7333
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AUD 0.0566
Multiples of: 10

                   
SI2301CDS


null 3A 400mW 112mΩ@4.5V,2.8A P Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 7332
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AUD 0.0168
Multiples of: 50

                   
SI3932DV


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 7323
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AUD 0.1309
Multiples of: 5

                   
2N7002KT1G-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 7307
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AUD 0.0116
Multiples of: 10

                   
CEDM8001VL TR


MOSFET 20V P-Ch Enh FET 10Vgs 100mA 100mW
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Central Semiconductor 7305
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AUD 0.1484
Multiples of: 1

         Smd/SmtSOT - 883VLCut TapeSi      
SQ2389ES-T1_GE3


MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
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Vishay 7200
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AUD 0.282
Multiples of: 1

4.1 A40 V94 mOhmsP - Channel 1.5 V- 55 C+ 175 C3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V8.2 nCEnhancementAec - Q101Trenchfet
DMN63D8LW-13


MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A
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Diodes Incorporated 6848
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AUD 0.0304
Multiples of: 20

380 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V0.9 nCEnhancement  
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