MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB120N08S403ATMA1


MOSFET N-CHANNEL 7580V
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Infineon 6778
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AUD 5.0563
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           Cut Tape       
Si3483CDV-T1-E3


MOSFET 30V 8.0A 4.2W 34mohm @ 10V
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Vishay 6771
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AUD 0.6073
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   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
HSBA4052


MOSFET N Channel 40V 50A 2.5V @ 250uA 8.5mO @ 12A,10V PRPAK5x6 RoHS
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HUASHUO 6760
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AUD 0.1705
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2N7002PS.115


Transistor: N-MOSFET x2; unipolar; 60V; 0.32A; 420mW; SC88
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Nexperia 6742
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AUD 0.1358
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SiR5623DP-T1-RE3


MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V
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Vishay 6737
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AUD 1.1676
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37.1 A60 V24 mOhmsP - Channel 2.6 V- 55 C+ 150 C59.5 WSMD/SMTPOWERPAK SO - 8 Si1 Channel- 20 V , + 20 V21.8 nCEnhancement  
RS1E240BNTB


Trans MOSFET N-CH 30V 24A 8-Pin HSOP EP T/R
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ROHM 6730
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AUD 0.3881
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24 A30 V2.3 mOhmsN - Channel 1 V- 55 C+ 150 C30 WSmd/SmtHSOP - 8Tape And ReelSi1 Channel20 V70 nCEnhancement  
RQ5A040ZPTL


P-Channel 12 V 4A (Ta) 700mW (Ta) Surface Mount TSMT3
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ROHM 6705
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AUD 0.4276
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4 A12 V30 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSMD/SMTSOT - 346T - 3Reel , Cut TapeSi1 Channel- 10 V , 10 V30 nCEnhancement  
DMN3032LE-13


Diodes Incorporated MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC
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Diodes Incorporated 6702
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AUD 0.1662
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5.6 A30 V29 mOhmsN - Channel 2 V- 55 C+ 150 C1.8 WSmd/SmtSOT223Reel-1 Channel+/- 20 V11.3 nCEnhancement  
STP5NK50Z


Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3
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STMicroelectronics 6512
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AUD 0.7843
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            Supermesh      
BSS123


100V 200mA 300mW 1.06O@10V,200mA N Channel SOT-23 MOSFETs ROHS
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Bourne 3744
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AUD 0.024
Multiples of: 20

                   
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