MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDN304P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 6975
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AUD 0.0498
Multiples of: 10

                   
DMN2041LSD-13


MOSFET MOSFET DUAL N-CHAN ENHANCE MODE
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Diodes Incorporated 6960
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AUD 0.2709
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   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel       
PJA3430_R1_00001


MOSFET /A30/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-20TMN/NF20T-QI04/PJ///
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Panjit 6954
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AUD 0.0525
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           Cut Tape       
IPW65R190CFDFKSA2


MOSFET HIGH POWER_LEGACY
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Infineon 6952
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AUD 2.9574
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           Tube       
AUIRF7309QTR


International Rectifier MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms
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Infineon 6944
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AUD 1.8218
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4 A30 V80 mOhmsN - Channel, P - Channel    1.4 WSmd/SmtSOIC - 8ReelSi2 Channel20 V16.7 nC Aec - Q101 
NCE3007S


MOSFET P Trench 30V 6.5A 2.5V @ 250uA 42 mΩ @ 6.5A,10V SOIC-8_150mil RoHS
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NCE Power 6940
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AUD 0.0903
Multiples of: 5

                   
MMBF170Q-7-F


MOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr
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Diodes Incorporated 6938
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AUD 0.0772
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500 mA70 V5.3 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V EnhancementAec - Q101 
Hot RQ5C060BCTCL


MOSFET Pch -20V -6A Si MOSFET
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ROHM 6751
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AUD 0.4121
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6 A20 V16.1 mOhmsP - Channel 1.2 V- 55 C+ 150 C1 WSmd/SmtSOT - 346 - 3Cut TapeSi1 Channel8 V19.2 nCEnhancement  
DMN60H080DS-7


MOSFET BVDSS: 501V~650V SSOT23 T&R 3K
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Diodes Incorporated 2457
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AUD 0.1084
Multiples of: 1

80 mA600 V100 OhmsN - Channel 1.5 V- 55 C+ 150 C1.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V1.7 nCEnhancement  
IRFS7730TRL7PP


International Rectifier MOSFET 75V Single N-Channel HEXFET
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Infineon 161
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AUD 2.5776
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240 A75 V2 mOhmsN - Channel 3.7 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V285 nC  Strongirfet
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