MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3J15FV,L3F(T


SOT-723 MOSFETs ROHS
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Toshiba 7533
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AUD 0.0683
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SSM3K15AMFV,L3F(T


SOT-723 MOSFETs ROHS
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Toshiba 7530
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AUD 0.0272
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IPG16N10S4-61


Infineon Technologies MOSFET MOSFET
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Infineon 7528
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AUD 0.8521
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16 A100 V53 mOhms , 53 mOhmsN - Channel 2 V- 55 C+ 175 C29 WSmd/SmtTDSON - 8ReelSi1 Channel20 V7 nC , 7 nCEnhancementAec - Q101 
SIHP21N60EF-BE3


MOSFET N-CHANNEL 600V
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Vishay 7525
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AUD 2.3913
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21 A600 V176 mOhmsN - Channel 4 V- 55 C+ 150 C227 WThrough HoleTO - 220AB - 3BulkSi1 Channel- 30 V , + 30 V84 nCEnhancement  
2N7002


SOT-23 MOSFETs ROHS
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Youtai 7517
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AUD 0.0165
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IPB065N10N3GATMA1


Infineon Technologies MOSFET
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Infineon 7517
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AUD 2.5794
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80 A100 V5.9 mOhmsn - channel 2 V- 55 C+ 175 C150 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V64 nCenhancement optimos
STN4438


MOSFET SOP-8 RoHS
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Youtai 7512
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AUD 0.1028
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FDMS86255


N-Channel 150 V 10A (Ta), 45A (Tc) 2.7W (Ta), 113W (Tc) Surface Mount 8-PQFN (5x6)
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ON Semiconductor 7511
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AUD 3.3873
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45 A150 V25 mOhmsN - Channel 4 V- 55 C+ 150 C113 WSmd/SmtPOWER - 56 - 10ReelSi1 Channel 63 nC  Powertrench Power Clip
DN3535N8-G


Transistor: N-MOSFET; unipolar; 350V; 0.2A; 1.6W; SOT89-3
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Microchip 7509
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AUD 1.121
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230 mA350 V10 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Depletion  
PJM2302NSA-S


MOSFET N Trench 20V 2A 1.2V @ 250uA 50 mΩ @ 2A,4.5V SOT-23 RoHS
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Pingjingsemi 7508
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AUD 0.0201
Multiples of: 20

                   
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