MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ECH8652-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 6741
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AUD 0.462
Multiples of: 1

- 6 A- 12 V49 mOhmsp - channel  - 55 C+ 150 C150 mWsmd/smtECH - 8Reelsi2 channel10 V11 nC   
IRFU9010PBF


MOSFET P-Chan 50V 5.3 Amp
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Vishay 6732
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AUD 1.004
Multiples of: 1

   P - Channel  - 55 C+ 150 C Through HoleIPAK - 3TubeSi      
BRCS3134ZK


DFN-3L(1x0.6) MOSFETs ROHS
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Blue Rocket 6731
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AUD 0.0242
Multiples of: 20

                   
DMP3056L-7


MOSFET 30V P-Ch Enh Mode 50mOhm -10Vgs -4.3A
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Diodes Incorporated 6731
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AUD 0.1928
Multiples of: 5

4.3 A30 V50 mOhmsP - Channel 1 V- 55 C+ 150 C1.38 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V5.8 nCEnhancement  
IRFBC20PBF-BE3


MOSFET 600V N-CH
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Vishay 6717
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AUD 0.8616
Multiples of: 1

2.2 A600 V4.4 OhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V18 nCEnhancement  
DMTH4007LK3-13


MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A
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Diodes Incorporated 6715
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AUD 0.5893
Multiples of: 1

70 A40 V5 mOhmsN - Channel 1 V- 55 C+ 175 C2.6 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V29.1 nCEnhancement  
2N7002AKS-QX


MOSFET MOSFET-LOW VOLT SOT363/SC-88
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Nexperia 6711
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AUD 0.0503
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220 mA60 V3 OhmsN - Channel 2.6 V- 55 C+ 175 C270 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V210 pCEnhancement  
SI4850EY-T1-GE3


MOSFET 60V 8.5A 3.3W 22mohm @ 10V
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Vishay 6701
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AUD 1.024
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel       
SL3401S


MOSFET P Trench 30V 4A 1.3V @ 250uA 60 mΩ @ 4A,10V SOT-23 RoHS
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SLKORMICRO 5645
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AUD 0.0318
Multiples of: 20

                   
YJS2301A


Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
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Yangjie 4117
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AUD 0.0868
Multiples of: 5

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