MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AS3401


30V 4.4A 55mO@4.4A,10V 1.2W P Channel SOT-23 MOSFETs ROHS
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AnBon 6828
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AUD 0.0387
Multiples of: 20

                   
AO3415C


SOT-23 MOSFETs ROHS
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Alpha & Omega 6799
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AUD 0.0903
Multiples of: 5

                   
ISC019N03L5SATMA1


MOSFET TRENCH <= 40V
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Infineon 6795
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AUD 0.4843
Multiples of: 1

100 A30 V1.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSMD/SMTTDSON - FL - 8Optimos ~ Strongirfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V22 nCEnhancement OptiMOS ~ StrongIRFET
AO3407


30V 4.1A 1.2W 48mΩ@10V,4.1A 3V@250uA 65pF@15V P Channel 650pF@15V 12.5nC@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 6790
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AUD 0.0334
Multiples of: 20

                   
BS170-D26Z


MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor 6790
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AUD 0.1765
Multiples of: 1

500 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C830 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel20 V Enhancement  
FDC610PZ-TP


30V 4.1A 60m@10V 350mW 1V@250uA SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 6785
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AUD 0.1194
Multiples of: 5

                   
IRFR9310TRPBF


P-Channel 400 V 1.8A (Tc) 50W (Tc) Surface Mount D-Pak
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Vishay 6737
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AUD 0.7697
Multiples of: 1

1.8 A400 V7 OhmsP - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V13 nCEnhancement  
WSE3099


MOSFET P Trench 30V 5A (Tc) 2V @ 250uA 65 mΩ @ 5A,10V SOT-89 (SOT-89-3) RoHS
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Winsok 5388
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AUD 0.2031
Multiples of: 5

                   
SIR426DP-T1-GE3


MOSFET 40V 30A 41.7W 10.5mohm @ 10V
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Vishay 4476
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AUD 0.8884
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
WNM2020-3/TR


MOSFET N Trench 20V 830mA 850mV @ 250uA 310 mΩ @ 550mA,4.5V SOT-23 (SOT-23-3) RoHS
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Will Semiconductor 3026
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AUD 0.0516
Multiples of: 20

                   
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