MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1012CR-T1-GE3


null 630mA 396mO@600mA,4.5V 240mW null SC-75A MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 7129
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AUD 0.1286
Multiples of: 5

600 mA20 V396 mOhmsN - Channel 400 mV- 55 C+ 150 C240 mWSmd/SmtSC - 75AReelSi1 Channel4.5 V1.3 nCEnhancement Trenchfet
ZXMN10A08E6TA


MOSFET 100V N-Chnl UMOS
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Diodes Incorporated 7033
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AUD 0.3579
Multiples of: 1

1.9 A100 V250 mOhmsN - Channel 2 V- 55 C+ 150 C1.1 WSmd/SmtSOT - 23 - 6ReelSi1 Channel20 V7.7 nCEnhancement  
DMP2004DWK-7


Diodes Incorporated MOSFET Dual P-Channel
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Diodes Incorporated 7027
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AUD 0.1875
Multiples of: 1

430 mA- 20 V900 mOhmsP - Channel8 V- 1 V- 65 C+ 150 C250 mWSmd/SmtSOT - 363 - 6Reel    Enhancement  
IRFU9220PBF


P-Channel 200 V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 7024
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AUD 1.5187
Multiples of: 1

   P - Channel  - 55 C+ 150 C Through HoleIPAKTubeSi      
CJ2306


MOSFET N Trench 30V 3.16A 3V @ 250uA 47 mΩ @ 3.5A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 7022
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AUD 0.0359
Multiples of: 20

                   
AO4407-HXY


30V 12A 15mΩ@10V,10A 2.5W P Channel SOP-8 MOSFETs ROHS
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HXY MOS 7015
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AUD 0.1192
Multiples of: 5

                   
DMG6898LSDQ-13


MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss
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Diodes Incorporated 7007
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AUD 0.5549
Multiples of: 1

9.5 A , 9.5 A20 v , 20 V11 mOhms , 11 mOhmsN - Channel 500 mV , 500 mV- 55 C+ 150 C1.28 WSmd/SmtSO - 8ReelSi2 Channel+/- 12 v , +/- 12 V26 nC , 26 nCEnhancementAec - Q101 
BUK9Y8R8-60ELX


MOSFET SINGLE N-CHANNEL 60 V, 5.6 MOH
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Nexperia 6925
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AUD 0.9916
Multiples of: 1

110 A60 V5.6 mOhmsN - Channel 2.1 V- 55 C+ 175 C194 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 10 V , + 10 V88 nCEnhancement  
SI4842BDY-T1-E3


MOSFET 30V 23A 3.5W
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Vishay 6321
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AUD 1.6007
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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel      Trenchfet
BSH105,235


NXP Semiconductors MOSFET TAPE13 MOSFET
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Nexperia 8
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AUD 0.156
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1.05 A20 V200 mOhmsN - Channel8 V - 55 C+ 150 C417 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V Enhancement  
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