MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CEDM8004VL


Central Semiconductor MOSFET P-Ch Enh Mode FET 30V 8.0VGS 450mA
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Central Semiconductor 7621
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AUD 0.1484
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450 mA30 V1.1 OhmsP - Channel8 V1 V- 65 C+ 150 C100 mWSmd/SmtSOT - 883VL - 3ReelSi1 Channel8 V0.88 nCEnhancement  
PSMQC280N10LS2_R2_00201


MOSFETs 100V 28m ohms Excellect low FOM MOSFET for Headlight solution
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Panjit 7620
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AUD 0.4767
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21 A100 V28 mOhmsN - Channel 2.3 V- 55 C+ 175 C29.4 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V9 nCEnhancement  
SQM40041EL_GE3


MOSFET Pch -40V Vds 20V Vgs TO-263
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Vishay 7619
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AUD 2.3623
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120 A40 V3.4 mOhmsP - Channel - 2.5 V- 55 C+ 175 C157 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V450 nCEnhancement Trenchfet
DMC3028LSDXQ-13


MOSFET Comp Pair Enh FET 30Vdss 20Vgss
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Diodes Incorporated 7604
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AUD 0.4348
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7.2 A , - 7.6 A30 v , - 30 V35 mOhms , 41 mOhmsN - Channel, P - Channel 1 v , - 1 V- 55 C+ 150 C1.5 WSmd/SmtSOIC - 8ReelSi +/- 20 v , +/- 20 V13.2 nC , 22 nCEnhancementAec - Q101 
R6002JND4TL1


MOSFETs 600V 1A SOT-223-3, PrestoMOS with integrated high-speed diode: R6002JND4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS series, R60xxJNx series increases design flexibility while maintaining
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ROHM 7601
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AUD 0.5395
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1 A600 V3.25 OhmsN - Channel 7 V- 55 C+ 150 C6.6 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V7 nCEnhancement  
R6006KND4TL1


MOSFETs 600V 2.8A SOT-223-3, High-speed switching Power MOSFET: R6006KND4 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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ROHM 7599
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AUD 0.7648
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2.8 A600 V870 mOhmsN - Channel 5.5 V- 55 C+ 150 C12.3 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V12 nCEnhancement  
IRLR8726TR(UMW)


TO-252 MOSFETs ROHS
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Youtai 7598
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AUD 0.1259
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AO4409-ES


30V 14A 3W 5.8m 1V 1PCSPChannel SOP-8 MOSFETs ROHS
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ElecSuper 7595
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AUD 0.1541
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EM6K6T2R


MOSFET Small Signal Dual N-CH 20V .3A .15W
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ROHM 7590
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AUD 0.1014
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300 mA20 V1 OhmsN - Channel8 V300 mV- 55 C+ 150 C150 mWSmd/SmtEMT - 6ReelSi2 Channel4 V Enhancement  
AO4459


MOSFET P Trench 30V 6.5A 2.5V @ 250uA 46 mΩ @ 6.5A,10V SOP-8_150mil RoHS
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Alpha & Omega 6862
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AUD 0.1127
Multiples of: 5

                   
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