MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTNUS3171PZT5G


MOSFET T1 20V P-CH SOT-1123
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ON Semiconductor 7701
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AUD 0.1583
Multiples of: 1

150 mA20 V3.4 OhmsP - Channel  - 55 C+ 150 C125 mWSmd/SmtSOT - 1123ReelSi1 Channel     
BSC040N10NS5SCATMA1


MOSFET TRENCH >=100V
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Infineon 7701
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AUD 2.4968
Multiples of: 1

136 A100 V4 mOhmsN - Channel 3.8 V- 55 C+ 150 C139 WSMD/SMTTDSON - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V72 nCEnhancement  
TNM03K20BX


20V 500mA 6V 1PCSNChannel DFN1006-3L MOSFETs ROHS
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Shenzhen JingYang 7697
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AUD 0.0282
Multiples of: 10

                   
1N60L


TO-252 MOSFETs ROHS
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Youtai 7693
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AUD 0.1213
Multiples of: 5

                   
PMZB670UPE,315


MOSFET P-Chan -20V -680mA
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Nexperia 7692
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AUD 0.1554
Multiples of: 5

680 mA20 V850 mOhmsP - Channel    715 mWSmd/SmtSOT - 883BReelSi1 Channel8 V    
IRFSL7434PBF


International Rectifier MOSFET HEXFET Power MOSFET 40V Single N-Channel
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Infineon 7687
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AUD 2.8274
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320 A40 V1.6 mOhmsN - Channel 3 V- 55 C+ 175 C294 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V216 nCEnhancement Strongirfet
TSM4800N15CX6 RFG


MOSFET 150V 1.4A Single N-C hannel Power MOSFET
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Taiwan Semiconductor 7686
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AUD 0.8442
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FDB0300N1007L


MOSFET 100V TO263 7L JEDEC GREEN EMC
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ON Semiconductor 7684
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AUD 5.9772
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200 A100 V11 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V81 nCEnhancement  
IPB80P04P4L04ATMA2


MOSFET MOSFET_(20V 40V)
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Infineon 7683
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AUD 2.4825
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80 A40 V5.6 mOhmsP - Channel 1.7 V- 55 C+ 175 C125 WSMD/SMTTO - 263 - 3 - 2Cut Tape , ReelSi1 Channel- 16 V , + 5 V135 nCEnhancement  
DMPH6050SFGQ-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 7680
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AUD 0.4435
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18 A60 V50 mOhmsP - Channel 3 V- 55 C+ 175 C2.8 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V24.1 nCEnhancement  
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