MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK3018


MOSFET N Channel 30V 100mA 1.5V @ 100uA 8Ω @ 10mA,4V SOT-23 RoHS
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Shikues 7644
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0174

Multiples of: 20

                   
DMN2050LFDB-7


MOSFET DUAL N-CH EH MODE 20V 45mOhm 4.5A
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Diodes Incorporated 7643
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.2305

Multiples of: 1

   N - Channel     Smd/SmtU - DFN2020 - B - 6Cut TapeSi2 Channel     
MCQ014N10YL-TP


MOSFETs N-CHANNEL MOSFET,SOP-8
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Micro Commercial Components (MCC) 7643
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.4225

Multiples of: 1

11 A100 V14 mOhmsN - Channel 3 V- 55 C+ 150 C2.5 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
CSD19538Q3A


MOSFET 100-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150
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Texas Instruments 7637
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.3433

Multiples of: 1

4.9 A100 V58 mOhmsN - channel 3.2 V- 55 C+ 150 C2.8 WSmd/smtVSONP - 8ReelSi1_Channel20 V4.3 nCEnhancement Nexfet
HYG011N04LS1TA


40V 320A 0.9mΩ@10V,50A 250W 1.8V@250uA 63pF@25V N Channel 5.87nF@25V 44nC@4.5V -55℃~+175℃@(Tj) TOLL MOSFETs ROHS
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HuaYi 7637
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.6237

Multiples of: 1

                   
SUM110P06-08L-E3


MOSFET 60V 110A 272W 8.0mohm @ 10V
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Vishay 7635
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 2.9657

Multiples of: 1

110 A60 V8 mOhmsP - Channel 1 V- 55 C+ 175 C272 WSmd/SmtTO - 263ReelSi1 Channel- 10 V160 nCEnhancement Trenchfet
2N7002KT 72K


SOT-523-3 MOSFETs ROHS
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Hong Kong Chuangji 7634
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0243

Multiples of: 10

                   
SI7101DN-T1-GE3


Vishay Semiconductors MOSFET -30V 7.2mOhm10V -35A P-Ch G-III
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Vishay 7631
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.6954

Multiples of: 1

- 35 A- 30 V7.2 mOhmsP - Channel25 V- 1.2 v to - 2.5 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel- 10 V43 nCEnhancement Trenchfet Power Mosfet
NVBLS1D5N10MCTXG


MOSFETs PTNG 100V STD TOLL
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ON Semiconductor 7624
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 5.7323

Multiples of: 1

300 A100 V3.9 mOhmsN - Channel 4 V- 55 C+ 175 C331 WSMD/SMTH - PSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V131 nCEnhancement PowerTrench
YJD60N02A


MOSFET TO-252 RoHS
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Yangjie 7622
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.1932

Multiples of: 5

                   
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