MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YJG30N06A


60V 30A 16mΩ@10V,15A 30W N Channel DFN-8(5.2x5.9) MOSFETs ROHS
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Yangjie 7168
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AUD 0.249
Multiples of: 5

                   
IPD025N06NATMA1


MOSFET MV POWER MOS
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Infineon 6983
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AUD 1.451
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtTO - 252 - 3Reel      Optimos
STF27N60M2-EP


MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 6982
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AUD 2.6959
Multiples of: 1000

20 A600 V163 mOhmsN - Channel 2 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3 Si1 Channel+/- 25 V33 nCEnhancement Mdmesh
BSC050NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 6980
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AUD 0.3678
Multiples of: 1

58 A25 V5 mOhmsN - Channel 1.2 V- 55 C+ 150 C28 WSmd/SmtTDSON - 8ReelSi1 Channel20 V10.4 nCEnhancement Optimos
LGE2304


Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23
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Luguang 6974
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AUD 0.0631
Multiples of: 5

                   
Si4114DY-T1-E3


MOSFET 20V 20A 5.7W 6.0mohm @ 10V
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Vishay 6954
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AUD 0.9621
Multiples of: 1

15.2 A20 V6 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel16 V Enhancement Trenchfet
BSC340N08NS3GATMA1


Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
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Infineon 6951
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AUD 0.4893
Multiples of: 1

            Optimos 3      
BUK9Y8R8-60ELX


MOSFET SINGLE N-CHANNEL 60 V, 5.6 MOH
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Nexperia 6944
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AUD 0.9949
Multiples of: 1

110 A60 V5.6 mOhmsN - Channel 2.1 V- 55 C+ 175 C194 WSMD/SMTSOT - 669 - 5Reel , Cut TapeSi1 Channel- 10 V , 10 V88 nCEnhancement  
IPW65R190CFDFKSA2


MOSFET HIGH POWER_LEGACY
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Infineon 6944
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AUD 2.5284
Multiples of: 1

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WSP4984


MOSFET 2 N Channel (Dual) 40V 10A (Tc) 2.7V @ 250uA 20 mΩ @ 6.6A,10V SOP-8_150mil RoHS
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Winsok 2923
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AUD 0.2434
Multiples of: 1

                   
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