MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISZ040N03L5ISATMA1


30V 4mO@30A,10V N Channel TSDSON-8-FL MOSFETs ROHS
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Infineon 7049
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AUD 0.3201
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BUK9Y153-100E,115


N-Channel 100 V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 7047
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AUD 0.2451
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9.4 A100 V122 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C37 WSmd/SmtLFPAK - 4ReelSi1 Channel15 V6.8 nCEnhancement  
JSM6435


PDFN5x6-8L MOSFETs ROHS
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JSMSEMI 7042
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AUD 0.265
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IPD60R380P6ATMA1


MOSFET N-Ch 600V 10.6A DPAK-2
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Infineon 7038
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AUD 0.8072
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10.6 A600 V380 mOhmsN - Channel 3.5 V- 55 C+ 150 C31 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V19 nCEnhancement CoolMOS
R6003KND4TL1


MOSFETs 600V 1.3A SOT-223-3, High-speed switching Power MOSFET: R6009KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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ROHM 7034
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AUD 0.528
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1.3 A600 V1.5 OhmsN - Channel 5.5 V- 55 C+ 150 C7.8 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V8 nCEnhancement  
BSC011N03LSI


Infineon Technologies MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
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Infineon 7033
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AUD 0.924
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100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8-Si1 Channel10 V68 nCEnhancement Optimos
IRFH8325TRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC
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Infineon 7031
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AUD 0.6074
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82 A30 V7.2 mOhmsN - Channel 1.8 V- 55 C+ 150 C54 WSmd/SmtPQFN - 8ReelSi1 Channel20 V32 nC   
HSK5P10


100V 5A 1.7W 280m@10V,5A 2V@250uA 1 Piece P-Channel SOT-89 MOSFETs ROHS
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HUASHUO 7027
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AUD 0.1433
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BSC123N08NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 7024
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AUD 0.8486
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55 A80 V10.3 mOhmsN - Channel 2 V- 55 C+ 150 C66 WSmd/SmtTDSONReelSi1 Channel20 V25 nCEnhancement Optimos
NTD25P03LG(UMW)


TO-252 MOSFETs ROHS
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Youtai 3909
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AUD 0.1001
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