MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZVN2106GTA


MOSFET Transistor - N Channel - 700 mA - 60 V - 2 ohm - 10 V - 2.4 V.
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Diodes Incorporated 9700
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AUD 0.472
Multiples of: 1000

710 mA60 V2 OhmsN - Channel 800 mV- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V Enhancement  
FDT457N


Transistor: N-MOSFET; unipolar; 30V; 5A; 3W; SOT223
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ON Semiconductor 7760
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AUD 0.5579
Multiples of: 4000

   N Channel               
NCV8402ASTT3G


ON Semiconductor MOSFET 42V 2.0A
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ON Semiconductor 7760
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AUD 0.6198
Multiples of: 1000

2 A55 V165 mOhmsN - Channel    1.1 WSmd/SmtSOT - 223 - 3ReelSi2 Channel   Aec - Q101 
NDT452AP


MOSFET P-Channel FET Enhancement Mode
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ON Semiconductor 7760
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AUD 0.6492
Multiples of: 4000

   P Channel      SOT - 223Reel       
FDT86246L


MOSFET 150V 2A N-Channel Power Trench MOSFET
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ON Semiconductor 7760
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AUD 0.6508
Multiples of: 1000

2 A150 V375 mOhmsN - Channel 800 mV- 55 C+ 150 C2.2 WSmd/SmtSOT - 223 - 3ReelSi1 Channel+/- 20 V6.3 nCEnhancement Powertrench
FDT86113LZ


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 7760
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AUD 0.6579
Multiples of: 1000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 223Reel       
IRFH7085TRPBF


MOSFET 60V StrongIRFET Power Mosfet
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Infineon 7760
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AUD 1.1208
Multiples of: 4000

147 A60 V3.6 mOhmsN - Channel20 V3.7 V- 55 C+ 150 C Smd/SmtPQFN - 8 5X6Reel   110 nC   
FQPF20N06


Transistor: N-MOSFET; unipolar; 60V; 15A; 30W; TO220FP
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ON Semiconductor 7760
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AUD 1.146
Multiples of: 1

            qfet®      
IRFB5620PBF


Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
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Infineon 7760
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AUD 1.2748
Multiples of: 1000

25 A200 V72.5 mOhmsN - Channel  - 55 C+ 175 C144 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V25 nCEnhancement  
IRF9393TRPBF


Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
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Infineon 354
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AUD 0.3551
Multiples of: 5

9.2 A30 V25.6 mOhmsP - Channel 1.8 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel25 V14 nCEnhancement  
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