MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R6003JND4TL1


MOSFETs 600V 1.3A SOT-223-3, PrestoMOS with integrated high-speed diode: R6003JND4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS series, R60xxJNx series increases design flexibility while maintaini
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ROHM 7224
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AUD 0.6163
Multiples of: 1

1.3 A600 V2.15 OhmsN - Channel 7 V- 55 C+ 150 C7.8 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V8 nCEnhancement  
CMRDM3575 TR


MOSFET N AND P CHANNEL MOSFET
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Central Semiconductor 7222
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AUD 0.2635
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160 mA , 140 mA20 V1.5 Ohms , 4 OhmsN And P - Channel 400 mV , 1 V- 65 C+ 150 C125 mWSmd/SmtSOT - 963ReelSi2 Channel8 V458 pC , 500 pCEnhancement Attomini
PHB66NQ03LT,118


Trans MOSFET N-CH 25V 66A 3-Pin(2+Tab) D2PAK T/R
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Nexperia 7219
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AUD 1.4405
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           Tape And Reel    enhancement  
TP2540N8-G


Transistor: P-MOSFET; unipolar; -400V; -0.4A; 1.6W; SOT89-3
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Microchip 7216
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AUD 1.791
Multiples of: 500

125 mA400 V25 OhmsP - Channel 1 V- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel- 10 V Enhancement  
IRF6674TRPBF


N-Channel 60 V 13.4A (Ta), 67A (Tc) 3.6W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
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Infineon 7215
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AUD 1.3003
Multiples of: 1

67 A60 V9 mOhmsN - Channel  - 40 C+ 150 C89 WSmd/SmtDirectfet - 3Reel 1 Channel20 V24 nCEnhancement Directfet
Hot IRF630NPBF


MOSFET N Trench 200V 9.3A 4V @ 250uA 300 mΩ @ 5.4A,10V TO-220 (TO-220-3) RoHS
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Infineon 7211
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AUD 0.3113
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
IPB120P04P404ATMA2


P-Channel 40V 120A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2
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Infineon 7200
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AUD 3.1762
Multiples of: 1

          TO - 263 - 3 , D²PAK (2 Leads + Tab) , TO - 263ABDigi - Reel®Mosfet (Metal Oxide)      
RS3E075ATTB


P-Channel 30 V 2W (Ta) Surface Mount 8-SOP-J
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ROHM 7198
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AUD 0.4909
Multiples of: 1

7.5 A30 V18 mOhmsP - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtSOP - 8ReelSi1 Channel20 V25 nCEnhancement  
NDT3055L


SOT-223 MOSFETs ROHS
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TECH PUBLIC 7182
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AUD 0.2122
Multiples of: 5

                   
FQA9P25


MOSFET 250V P-Channel QFET
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ON Semiconductor 5861
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AUD 2.5776
Multiples of: 1

10.5 A250 V620 mOhmsP - Channel  - 55 C+ 150 C150 WThrough HoleTO - 3PNTubeSi1 Channel30 V Enhancement Qfet
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