MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG6301UDW-7


MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
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Diodes Incorporated 7813
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AUD 0.096
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240 mA25 V3.8 OhmsN - Channel 850 mV- 55 C+ 150 C370 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel8 V360 pCEnhancement  
FDMS8570SDC


MOSFET 25V N-Channel PowerTrench SyncFET
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ON Semiconductor 7811
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AUD 2.6786
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60 A25 V2.8 mOhmsn - channel  - 55 C+ 150 C59 Wsmd/smtPOWER - 56Reelsi2 channel12 V42 nCenhancement powertrench syncfet
RSD160P05TL


P-Channel 45 V 16A (Ta) 20W (Tc) Surface Mount CPT3
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ROHM 7810
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AUD 1.3365
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16 A45 V P - Channel 3 V  20 WSmd/SmtCPT - 3ReelSi1 Channel20 V16 nC   
DMN10H099SFG-13


MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
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Diodes Incorporated 7808
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AUD 0.4808
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4.2 A100 V99 mOhmsN - Channel     Smd/SmtPowerdi3333 - 8Cut TapeSi1 Channel 25.2 nCEnhancement Powerdi
HL2300


20V 4.5A 25m@4.5V,4.5A 1W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 7803
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AUD 0.0299
Multiples of: 20

                   
BSC034N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 57W; PG-TDSON-8
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Infineon 7795
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AUD 0.5622
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            Optimos 3      
BRCS9435SC


MOSFET P Trench 30V 5.3A 3V @ 250uA 50 mΩ @ 5.3A,10V SOP-8 RoHS
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Blue Rocket 7793
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AUD 0.0692
Multiples of: 5

                   
IAUC100N04S6L014ATMA1


MOSFET MOSFET_20V 40V
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Infineon 7792
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AUD 0.8503
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           Cut Tape       
DMNH4026SSD-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 7789
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AUD 0.4906
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           Cut Tape       
BSC0925ND


MOSFET N-Ch 30V 40A TISON-8
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Infineon 7779
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AUD 0.7423
Multiples of: 1

40 A30 V4.2 mOhms , 4.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C30 WSmd/SmtTISON - 8Cut TapeSi2 Channel20 V17 nC , 17 nCEnhancement Optimos
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