MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1308EDL-T1-GE3


MOSFET 30V Vds 12V Vgs SC70-3
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Vishay 7881
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AUD 0.1453
Multiples of: 5

1.5 A30 V132 mOhmsN - Channel12 V0.6 v to 1.5 V- 55 C+ 150 C400 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel10 V1.4 nCEnhancement Trenchfet
ZVN4206AV


MOSFET Avalanche
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Diodes Incorporated 7426
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AUD 0.4088
Multiples of: 1

600 mA60 V1 OhmsN - Channel 1.3 V- 55 C+ 150 C700 mWThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
IPD090N03LGATMA1


MOSFET N-Ch 30V 40A DPAK-2
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Infineon 7422
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AUD 0.3513
Multiples of: 1

40 A30 V7.5 mOhmsN - Channel  - 55 C+ 175 C42 WSmd/SmtTO - 252ReelSi1 Channel20 V15 nC  Optimos
TQM110NB04DCR RLG


MOSFET 40V, 50A, Dual N-Channel Power MOSFET
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Taiwan Semiconductor 7406
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AUD 3.3462
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10 A40 V11 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTPDFN56U - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V26 nCEnhancementAEC - Q101 
MCG50P03-TP


MOSFET P-CHANNEL MOSFET
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Micro Commercial Components (MCC) 7398
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AUD 0.5491
Multiples of: 1

                   
DMN601K-7


60V 300mA 2O@10V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 7391
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AUD 0.0407
Multiples of: 20

   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
IAUC60N04S6L030HATMA1


Mosfet Array 2 N-Channel (Half Bridge) 40V 60A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-56
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Infineon 7388
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AUD 1.1443
Multiples of: 1

119 A40 V3 mOhmsN - Channel 2 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Cut Tape , ReelSi1 Channel- 16 V , + 16 V27 nCEnhancement OptiMOS
BSC123N10LSGATMA1


Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
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Infineon 7370
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AUD 1.0639
Multiples of: 1

            Optimos 2      
DMN61D8LVT-13


MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
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Diodes Incorporated 6370
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AUD 0.2315
Multiples of: 1

           ReelSi      
MMFTN138K


MOSFETs MOSFET, SOT-23, 60V, 0.36A, 150C, N
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Diotec 713
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AUD 0.046
Multiples of: 1

360 mA60 V1.6 OhmsN - Channel 1.6 V- 55 C+ 150 C420 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.3 nCEnhancement  
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