MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS205NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 7963
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AUD 0.1278
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2.5 A20 V40 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel12 V3.2 nCEnhancementAec - Q101 
DMP21D6UFB4-7B


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 7958
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AUD 0.1046
Multiples of: 5

580 mA20 V1 OhmsP - Channel 1 V- 55 C+ 150 C0.98 WSmd/SmtX2 - DFN1006 - 3Cut TapeSi1 Channel8 V0.8 nCEnhancement  
DMN4035L-7


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 7955
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AUD 0.1545
Multiples of: 5

                   
FCB199N65S3


MOSFET SuperFET3 650V 199mOhm D2PAK PKG
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ON Semiconductor 7952
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AUD 3.22
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14 A650 V170 mOhmsN - Channel 2.5 V- 55 C+ 150 C98 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V30 nCEnhancement  
IQDH88N06LM5CGSCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 7950
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AUD 3.8762
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447 A60 V860 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTPG - WHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V76 nCEnhancement OptiMOS
SI2303


SOT-23-3 MOSFETs ROHS
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Youtai 7942
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AUD 0.028
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SQ7414CENW-T1_JE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 7941
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AUD 0.5168
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18 A60 V23 mOhmsN - Channel 2.5 V- 55 C+ 175 C62.5 WSMD/SMTPOWERPAK 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
2N7002PW


MOSFETs MOSFET, SOT-323, 60V, 0.315A, 150C, N
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Diotec 7938
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AUD 0.0367
Multiples of: 1

           Reel , Cut TapeSi      
DMP6050SFG-13


MOSFET 60V P-Ch Enh FET 20Vgss 1.8W
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Diodes Incorporated 7938
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AUD 0.3667
Multiples of: 1

           ReelSi      
2N7002ZG-AE2-R


SOT-23 MOSFETs ROHS
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Unisonic 7934
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AUD 0.0195
Multiples of: 5

                   
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