MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002KT1G-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 7307
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AUD 0.0116
Multiples of: 10

                   
CEDM8001VL TR


MOSFET 20V P-Ch Enh FET 10Vgs 100mA 100mW
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Central Semiconductor 7305
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AUD 0.1379
Multiples of: 1

         Smd/SmtSOT - 883VLCut TapeSi      
ZXMHC3F381N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 30V 3.98A, 3.36A 870mW Surface Mount 8-SO
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 7290
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AUD 0.6452
Multiples of: 1

4.98 A , 4.13 A30 V33 mOhms , 55 mOhmsN_And_P - channel 1 V- 55 C+ 150 C0.87 WSmd/smtSOIC - 8ReelSi4 Channel10 v , - 10 V9 nC , 12.7 nCEnhancement  
DMG4800LK3-13


MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A
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Diodes Incorporated 7289
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AUD 0.2693
Multiples of: 1

10 A30 V12 mOhmsN - Channel 800 mV- 55 C+ 150 C1.71 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel25 V8.7 nCEnhancement  
NTD4808NT4G


Trans MOSFET N-CH 30V 13.8A 3-Pin(2+Tab) DPAK T/R
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ON Semiconductor 7275
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AUD 0.3629
Multiples of: 1

           Tape And Reel    enhancement  
ZXMP7A17KTC


P-Channel 70 V 3.8A (Ta) 2.11W (Ta) Surface Mount TO-252-3
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Diodes Incorporated 7275
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AUD 0.4696
Multiples of: 2500

5.7 A70 V160 mOhmsP - channel 1 V- 55 C+ 150 C9.25 WSmd/smtDPAK - 3ReelSi1 Channel- 10 V18 nCEnhancement  
SI4431CDY-T1-GE3


P-Channel 30 V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SOIC
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Vishay 7275
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AUD 0.4478
Multiples of: 2500

   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
ZVN4210A


N-Channel 100 V 450mA (Ta) 700mW (Ta) Through Hole TO-92
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Diodes Incorporated 7259
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AUD 0.4515
Multiples of: 1

450 mA100 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3 Si1 Channel10 V Enhancement  
KPD7910A


100V 28A 102W 60m@10V,10A 2V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
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KIA 3564
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AUD 0.1882
Multiples of: 5

                   
BUK9Y43-60E,115


MOSFET BUK9Y43-60E/LFPAK/REEL7
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Nexperia 168
Ships to you
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AUD 0.3201
Multiples of: 1

22 A60 V38 mOhmsN - Channel 1.4 V- 55 C+ 175 C45 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V8.2 nCEnhancement  
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