MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP220N6F7


MOSFET LGS LV MOSFET
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STMicroelectronics 13968
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AUD 2.0486
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120 A60 V2.4 mOhmsN - Channel 4 V- 55 C+ 175 C237 WThrough HoleTO - 220 - 3TubeSi1 Channel+/- 20 V100 nCEnhancement Stripfet
IPB120P04P404ATMA2


P-Channel 40V 120A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2
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Infineon 7200
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AUD 3.1762
Multiples of: 1

          TO - 263 - 3 , D²PAK (2 Leads + Tab) , TO - 263ABDigi - Reel®Mosfet (Metal Oxide)      
PSMN1R2-25YLDX


MOSFET PSMN1R2-25YLD/LFPAK/REEL 7" Q1
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Nexperia 7198
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AUD 0.7651
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100 A25 V1.03 mOhmsN - Channel 1.2 V- 55 C+ 175 C172 WSMD/SMTSOT - 669 - 5Reel , Cut TapeSi1 Channel- 20 V , 20 V60.3 nCEnhancement  
IAUT300N10S5N015ATMA1


OptiMOS-5 Power Transistor MOSFET N-Channel 100V 300A 8-Pin PG-HSOF-1 T/R
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Infineon 7195
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AUD 3.6408
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300 A100 V1.5 mOhmsN - Channel 2.2 V- 55 C+ 175 C375 WSmd/SmtHSOF - 8Cut TapeSi1 Channel10 V166 nCEnhancementAec - Q101 
FDT459N


MOSFET SOT-223 N-CH 30V
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ON Semiconductor 7192
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AUD 0.7629
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6.5 A30 V35 mOhmsn - channel  - 55 C+ 150 C3 Wsmd/smtSOT - 223Reelsi1 channel20 V enhancement  
SSM3K36MFV,L3F


Toshiba MOSFET Small-signal FET 0.5A 20V 46pF 1.52
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Toshiba 7187
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AUD 0.0617
Multiples of: 10

500 mA20 V630 mOhmsN - Channel 350 mV + 150 C150 mWSmd/SmtSOT - 723 - 3ReelSi1 Channel5 V1.23 nCEnhancement  
50N06(TO-252)


TO-252 MOSFETs ROHS
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GOODWORK 7187
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AUD 0.1078
Multiples of: 5

                   
HSS3402A


MOSFET N Channel 30V 5.3A 1.4V @ 250uA 28mO @ 5.9A,10V SOT-23-3 RoHS
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HUASHUO 7178
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AUD 0.0145
Multiples of: 50

                   
BSH103


SOT-23 MOSFETs ROHS
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TECH PUBLIC 426
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AUD 0.0359
Multiples of: 20

                   
SI2301HDS-T1-GE3


MOSFETs P-CHANNEL 20-V (D-S) MOSFET
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Vishay 0
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AUD 0.0922
Multiples of: 1

                   
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