MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB18NF25


MOSFET N-Ch 250 V .14 ohm 17A STripFET II
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STMicroelectronics 7760
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AUD 1.4063
Multiples of: 1000

17 A250 V140 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtD2PAKReelSi1 Channel20 V  Aec - Q101Stripfet
FDP025N06


N-Channel 60 V 120A (Tc) 395W (Tc) Through Hole TO-220-3
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ON Semiconductor 7760
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AUD 5.0198
Multiples of: 1000

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
BTS247ZE3062AATMA2


Infineon Technologies MOSFET N-Ch 55V 19A D2PAK-4
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Infineon 7760
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AUD 5.1339
Multiples of: 1

19 A55 V18 mOhmsn - channel 1.6 V- 40 C+ 175 C120 Wsmd/smtPG - TO 220 - 5Reelsi1 channel20 V60 nCenhancementaec - q101 
NTNS3166NZT5G


MOSFET NFET SOT883 20V 361MA 0.7
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ON Semiconductor 7759
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AUD 0.1352
Multiples of: 1

           ReelSi      
FQT1N60CTF_WS


Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223
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ON Semiconductor 7758
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AUD 0.451
Multiples of: 1

            Qfet®      
IRFR210TRPBF-BE3


N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 7755
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AUD 0.6227
Multiples of: 2000

2.6 A200 V1.5 OhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V8.2 nCEnhancement  
NTGS3130NT1G


ON Semiconductor MOSFET POWER MOSFET 20V 5.6A SNGL CH
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ON Semiconductor 7752
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AUD 0.4901
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5.6 A20 V24 mOhmsN - Channel8 V - 55 C+ 150 C1.1 WSmd/SmtTSOP - 6ReelSi1 Channel8 V Enhancement  
LP2301BLT1G


MOSFET P Trench 20V 2.8A 900mV @ 250uA 100 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Leshan 7751
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AUD 0.0224
Multiples of: 20

                   
SI9945AEY


SOP-8 MOSFETs ROHS
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TECH PUBLIC 7751
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AUD 0.3169
Multiples of: 5

                   
IPT017N12NM6ATMA1


MOSFETs N
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Infineon 7750
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AUD 4.2738
Multiples of: 1

331 A120 V1.7 mOhmsN - Channel 2.6 V- 55 C+ 175 C395 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V113 nCEnhancement OptiMOS
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