MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD50P04P413ATMA2


MOSFET MOSFET_20V 40V
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Infineon 7677
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.9094

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           Cut Tape       
FDD8878


N-Channel 30 V 11A (Ta), 40A (Tc) 40W (Tc) Surface Mount TO-252AA
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ON Semiconductor 7671
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 0.8859

Multiples of: 1

40 A30 V15 mOhmsn - channel  - 55 C+ 175 C40 Wsmd/smtTO - 252ABReelsi1 channel20 V enhancement powertrench
DMN2041UVT-7


MOSFET MOSFET BVDSS: 8V 24V TSOT26 T&R 3K
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Diodes Incorporated 7670
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.2008

Multiples of: 1

                   
DMN4027SSD-13


Mosfet Array 2 N-Channel (Dual) 40V 5.4A 1.8W Surface Mount 8-SO
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Diodes Incorporated 7667
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.5029

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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8Reel       
SIR578DP-T1-RE3


MOSFETs SOT669 150V 70.2A N-CH MOSFET
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Vishay 7663
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.5819

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70.2 A150 V8.8 mOhmsN - Channel 4 V- 55 C+ 150 C SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V24.5 nCEnhancement  
TN2510N8-G


Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
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Microchip 7663
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 1.9345

Multiples of: 500

730 mA100 V1.5 OhmsN - Channel 600 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel10 V Enhancement  
SI2318DS


SOT23 MOSFETs ROHS
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TECH PUBLIC 7654
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.1065

Multiples of: 5

                   
SSM6N15AFE,LM


Toshiba MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD
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Toshiba 7653
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.0739

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100 mA30 V3.6 OhmsN - Channel    150 mWSmd/SmtSOT - 23 - 6ReelSi2 Channel     
FDD86367


MOSFET MV7 80/20V 1000A N-chanPwrTrnchMOSFET
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ON Semiconductor 7541
Ships to you
between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.7984

Multiples of: 1

100 A80 V3.3 mOhmsN - Channel 2 V- 55 C+ 175 C227 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V88 nCEnhancementAec - Q101 
ZXM62P02E6TA


P-Channel 20 V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 6863
Ships to you
between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.4976

Multiples of: 1

2.3 A20 V200 mOhmsP - channel 700 mV- 55 C+ 150 C1.1 WSmd/smtSOT - 23 - 6ReelSi1 Channel- 4.5 V Enhancement  
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