MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002KM


60V 300mA 2.5@4.5V,0.3A 150mW 2.5V@250uA SOT-723 MOSFETs ROHS
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TECH PUBLIC 6887
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AUD 0.0235
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AO4882-MS


40V 6A 25mΩ@10V,6A 1.9W 1.6V@250uA 76pF@15V 2 N-Channel 1.013nF@15V 9.8nC@4.5V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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MSKSEMI 6887
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AUD 0.1751
Multiples of: 5

                   
RS3E075ATTB


P-Channel 30 V 2W (Ta) Surface Mount 8-SOP-J
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ROHM 6885
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AUD 0.4767
Multiples of: 1

7.5 A30 V18 mOhmsP - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtSOP - 8ReelSi1 Channel20 V25 nCEnhancement  
Hot ZXMC3AMCTA


MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS
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Diodes Incorporated 6882
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AUD 0.6739
Multiples of: 1

3.7 A , 2.7 A30 V100 mOhms , 280 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtDFN3020 - B - 8Cut TapeSi2 Channel20 V3.9 nC , 6.4 nCEnhancement  
PSMN014-40HLDX


MOSFETs PSMN014-40HLD/SOT1205/LFPAK56D
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Nexperia 6881
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AUD 0.6222
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42 A40 V13.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C46 WSMD/SMTLFPAK - 56D - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V19.4 nCEnhancement  
SI2302


20V 3.3A 0.7W 29mΩ@4.5V,3A 0.75V@250uA 80pF@10V N Channel 300pF@10V 4nC@4.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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DOWO 6867
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AUD 0.0282
Multiples of: 20

                   
DMC2990UDJ-7


SOT-963-6 MOSFETs ROHS
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Diodes Incorporated 6867
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AUD 0.0761
Multiples of: 5

450 mA , 310 mA20 V990 mOhms , 1.9 OhmsN - Channel, P - Channel 400 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6Cut TapeSi2 Channel4.5 V0.5 nC , 0.4 nCEnhancement  
FDC2512


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 6833
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AUD 0.1878
Multiples of: 5

                   
IRF7424TRPBF


SOP-8 MOSFETs ROHS
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TECH PUBLIC 6615
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AUD 0.214
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WNM2030-3/TR


MOSFET N Trench 20V 880mA 1V @ 250uA 310 mΩ @ 550mA,4.5V SOT-723 RoHS
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Will Semiconductor 5858
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AUD 0.0508
Multiples of: 20

                   
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