MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRF7342TRPBF


MOSFET 2 P Channel (Dual) 55V 3.4A 1V @ 250uA 105 mΩ @ 3.4A,10V SOIC-8_150mil RoHS
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Infineon 8702
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AUD 0.5263
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3.4 A55 V105 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V26 nC   
SQA411CEJW-T1_GE3


MOSFET
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Vishay 8698
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AUD 0.2633
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6.46 A60 V155 mOhmsP - Channel 2.5 V- 55 C+ 175 C13.6 WSMD/SMTPOWERPAK SC - 70W - 6LReel , Cut TapeSi1 Channel- 20 V , + 20 V10.2 nCEnhancement  
DMP2065UFDB-7


MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
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Diodes Incorporated 8697
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AUD 0.2794
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         Smd/SmtU - DFN2020 - B - 6Cut TapeSi      
IRFR110TRLPBF-BE3


N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 8692
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AUD 0.6115
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4.3 A100 V540 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V8.3 nCEnhancement  
AO3401


SOT-23 MOSFETs ROHS
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DOWO 8691
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AUD 0.0289
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DMN3300U-7


Diodes Incorporated MOSFET 600mW 30Vdss
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Diodes Incorporated 8687
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AUD 0.2759
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2 A30 V150 mOhmsN - Channel  - 55 C+ 150 C600 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
DMN3900UFA-7B


N-Channel 30 V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3
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Diodes Incorporated 8686
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AUD 0.1641
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0.65 A30 V760 mOhmsN - Channel8 V0.95 V- 55 C+ 150 C490 mWSmd/SmtX2 - DFN0806 - 3Reel   0.7 nCEnhancement  
AGM01P15E


100V 4.3A 270m@10V,4A 1.25W 1.6V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
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AGM-Semi 8681
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AUD 0.0992
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SSM5H16TU,LF


MOSFET Small Signal MOSFET N-ch + SBD VDSS=30V VR=30VISBD=0.8AVGSS=+-12VID=1.9ARDSON=0.103Ohm@4V
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Toshiba 8673
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AUD 0.1867
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1.9 A30 V133 mOhmsN - Channel 1 V- 55 C+ 125 C0.5 WSmd/SmtUFV - 5Cut TapeSi1 Channel12 V1.9 nCEnhancement  
DMT6010LSS-13


MOSFET 60V N-Ch Enh FET 12mOhm 4.5Vgs 11.5A
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Diodes Incorporated 8672
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AUD 0.88
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   N - Channel     Smd/SmtSO - 8Cut TapeSi1 Channel     
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